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BC817-25 Datasheet PDF


Part Number BC817-25
Manufacturer Multicomp
Title NPN General Purpose Amplifier
Description NPN General Purpose Amplifier Features: •  For general AF applications •  Complementary PNP type available BC807 •  High collector current •  Hig...
Features
•  For general AF applications
•  Complementary PNP type available BC807
•  High collector current
•  High current gain
•  Low collector-emitter saturation voltage Applications:
•  General purpose medium power amplifier
•  Switching requiring collector currents up to 1.2mA Collector 3 1 Base 2 Emi...

File Size 1.24MB
Datasheet BC817-25 PDF File








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BC817-25 : Features  Ideally Suited for Automatic Insertion  Epitaxial Planar Die Construction  Complementary PNP Types Available (BC807)  For switching and AF Amplifier Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  Automotive-Compliant Parts Are Available Under Separate Datasheet (BC817-16Q_40Q) BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plate.

BC817-25 : Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) BC817-16 THRU BC817-40 NPN Small Signal Transistor 300mW Maximum Ratings • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 417 ℃/W Junction to Ambient SOT-23 A D Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation@Ts=50℃( Note2) Symbol VCBO VCEO VEBO IC ICM PC Rating Unit 50 V 45 V 5 V 500 mA 1000 mA 300.

BC817-25 : BC817, BC818 NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary types: BC807, BC808 (PNP) 2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BC817 45 50 5 500 1 100 200 330 150 BC818 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base curren.

BC817-25 : NPN general-purpose transistors. Table 1. Product overview Type number Package NXP BC817 SOT23 BC817W SOT323 BC337[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement BC807 BC807W BC327 1.2 Features „ High current „ Low voltage 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC817; BC817W; BC337 IC = 100 mA; VCE = 1 V BC817-16; BC817-16W; BC337-16 BC817-25; BC817-25W; BC337-.

BC817-25 : Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C 556 °C /W PD Total Device Power Dissipation, Alumina Substrate 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient (Note 2) 417 °C /W TJ, TSTG Junc.

BC817-25 : BC817 ... BC818 BC817 ... BC818 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 800 mA hFE ~ 160/250/400 Tjmax = 150°C VCES = 30...50 V Ptot = 310 mW Version 2017-08-15 SOT-23 (TO-236) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 1 2 1.9±0.1 1=B 2=E 1.1+0.1 -0.2 3=C Dimensions - Maße [mm] 2.4 ±0.2 1.3±0.1 ELV Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Weight approx. Case material Solder & assembly condit.

BC817-25 : Elektronische Bauelemente BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Collector 3 1 Base 2 Emitter K F SOT-23 A L 3 Top View 1 E 2 CB 1 D GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS at TA = 25°C PARAMETER SYMBOL Collector - Base Voltage Collector - Emitter V.

BC817-25 : Green compound 2 Version:J1702 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 IC , Collector Current (A) 1 0.1 0.01 0.001 0 VCE = 5 V 100 200 300 400 500 hFE IC , Collector Current (mA) BC817-16/-25/-40 Taiwan Semiconductor Fig. 2 Collector-Emitter Saturation Voltage VS. Collector Current 10.00 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VCE(sat) , Collector Emitter Voltage (V) -IC, Collector Current (mA) Fig.3 Base-Emitter Saturation Voltage VS. Collector Current 1000 Fig.4 Base-Emitter On Voltage VS. Collector Current 1 IC , Collector Current (A) 100 0.1 10 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V.

BC817-25 : BC817-25 ® BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC817-25 BC817-40 Marking 6B 6C s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s THE PNP COMPLEMENTARY TYPES ARE t(s)BC807-25 AND BC817-40 RESPECTIVELY cAPPLICATIONS us WELL SUITABLE FOR PORTABLE rodEQUIPMENT s SMALL LOAD SWITCH TRANSISTORS PWITH HIGH GAIN AND LOW SATURATION leteVOLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM Product(s) - ObsoABSOLUTE MAXIMUM RATINGS leteSymbol Parameter oVCBO Collector-Base Voltage (IE = 0) bsVCEO Collector-Emitter Voltage (IB = 0) O VEBO Emitter-Base Voltage (IC = 0) Value 50 45 5 Unit V V V.

BC817-25 : only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such appli.

BC817-25 : The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC817 50 BC818 30 45 25 5.0 500 1.0 200 350 -65 to +150 357 UNITS V V V mA A mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C.

BC817-25 : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features IC , BC807 。  High IC ,complementary pair with BC807. / Applications 。 Purpose: General power amplifier and switching application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range 16 100~250 25 160~400 Marking H6A H6B 40 250~600 H6C http://www.fsbrec.com 1/6 BC817 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - peak collector current Collector Power D.

BC817-25 : BC817 NPN Silicon Epitaxial Planar Transistors For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot RØJA TJ TS VALUE 50 45 5 500 200 500 150 - 55 to + 150 UNIT V V V mA mW K/W ℃ ℃ Electrical Cha.

BC817-25 : The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. 3 1 2 SOT-23 *Pb-free plating product number:BC817L PIN CONFIGURATION PIN NO. PIN NAME 1 EMITTER 2 BASE 3 COLLECTOR ORDERING INFORMATION Order Number Normal Lead Free Plating BC817-16-AE3-R BC817L-16-AE3-R BC817-25-AE3-R BC817L-25-AE3-R BC817-40-AE3-R BC817L-40-AE3-R www.DataSheet4U.com Package Packing SOT-23 SOT-23 SOT-23 Tape & Reel Tape & Reel Tape & Reel MARKING BC817-16 BC817-25 BC817-40 6A 6B 6C www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 QW-R206-025.B BC817 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING(T.

BC817-25 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 50 45 Emitter-Base Voltage VEBO 5 Collector Current IC 800 Emitter Current IE -800 Collector Power Dissipation PC* 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.9% Alumina 10 8 0.6mm. UNIT V V V mA mA mW BC817 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K .

BC817-25 : NPN General Purpose Amplifier FEATURES z For general AF application. z Complementary PNP type available BC807. z High collector current, high current gain. z Low collector-emitter saturation voltage. Pb Lead-free Production specification BC817-16/-25/-40 ORDERING INFORMATION Type No. Marking BC817-16 BC817-25 BC817-40 6A 6B▪ 6C SOT-23 Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 50 45 5 500 300 -55 to +150 Unit V V V mA mW ℃ ELECTR.




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