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BC858


Part Number BC858
Manufacturer Kingtronics
Title PNP Silicon Epitaxial Transistors
Description BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Abso...
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BC850 : SMD Type NPN Transistors BC849~BC850 (KC849~KC850) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BC859 and BC860. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage BC849 BC850 Collector - Emitter Voltage BC849 BC850 Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation (Note.1) Thermal Resistance From Junction to Ambient (Note.1) Junction.

BC850 : Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a B.

BC850 : NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗ Top view handbook, halfpage BC849; BC850 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak.

BC850 : BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor August 2015 BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for Automatic Insertion in Thick and Thin-film Circuits • Low Noise: BC850 • Complement to BC856, BC857, BC858, BC859, and BC860 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848BMTF BC848CMTF BC850AMTF BC850CMTF Marking 8AA 8AB 8AC 8BA 8BB 8BC 8CB 8CC 8EA 8EC Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Ree.

BC850 : BC846 ... BC850 BC846 ... BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO = 30...65 V Ptot = 250 mW Version 2015-10-30 ~ SOT-23 (TO-236) 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 1 1.9±0.1 2 1.1+0.1 -0.2 2.4 ±0.2 1.3±0.1 ELV Typical Applications Signal processing, Switching, Amplification Commercial grade 1 Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu .

BC850 : SEMICONDUCTOR TECHNICAL DATA BC849/850 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With PNP Type BC859/860. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage BC849 BC850 VCBO 30 50 Collector-Emitter Voltage BC849 BC850 VCEO 30 45 Emitter-Base Voltage VEBO 5 Collector Current IC 100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mW Q ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC849 Breakdown Voltage BC850 Collecto.

BC850 : UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION  FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 BC860  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BC846L-x-AE3-R BC846G-x-AE3-R SOT-23 BC847L-x-AE3-R BC847G-x-AE3-R SOT-23 BC848L-x-AE3-R BC848G-x-AE3-R SOT-23 BC849L-x-AE3-R BC849G-x-AE3-R SOT-23 BC850L-x-AE3-R BC850G-x-AE3-R SOT-23 BC846L-x-AL3-R BC846G-x-AL3-R SOT-323 BC847L-x-AL3-R BC847G-x-AL3-R SOT-323 BC848L-x-AL3-R BC848G-x-AL3-R SOT-323 BC849L-x-AL3-R BC849G-x-AL3-R SOT-323 BC850L-x-AL3-R BC850G-x-AL3-R SOT-323 BC84.

BC850 : BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram D evice M arking: BC 846A=46A BC 847A=47A BC 848A=48A BC 846B=46B BC 847B=47B BC 848B=48B BC 849B=49B BC 850B=50B BC 847C =47C BC 848C =48C BC 849C =49C BC 850C =50C ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous.

BC850 : BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC846 BC847, BC850 BC848, BC849 Collector Emitter Voltage BC846 BC847, BC850 BC848, BC849 Emitter Base Voltage BC846, BC847 BC848, BC849, BC850 Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCBO VCBO VCEO VCEO VCEO VEBO VEBO IC ICM Ptot TJ TS Value 80 50 30 65 45 30 6 5 100 200 200 150 - 65 to + 150 Units V V V V V V V V mA mA mW OC OC SEMTECH ELECTRONIC.

BC850 : BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for Automatic Insertion in Thick and Thin-film Circuits • Low Noise: BC850 • Complement to BC856, BC857, BC858, BC859, and BC860 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848BMTF BC848CMTF BC850AMTF BC850CMTF Marking 8AA 8AB 8AC 8BA 8BB 8BC 8CB 8CC 8EA 8EC Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Reel Tape and Re.

BC850-AU : BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0003 ounces, 0.0084 grams Device Marking: BC846A-AU=46A BC847A-AU=47A BC848A-AU=48A BC846B-AU=46B BC847B-AU=47B BC848B-AU=48B BC849B-AU=49B BC850B-AU=50B .

BC850A : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,。 Low current, Low voltage. / Applications 。 General power amplifier and switching application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 200~450 Marking H2E 2FH C 420~800 H2G http://www.fsbrec.com 1/6 BC850 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO.

BC850A : BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor August 2015 BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for Automatic Insertion in Thick and Thin-film Circuits • Low Noise: BC850 • Complement to BC856, BC857, BC858, BC859, and BC860 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848BMTF BC848CMTF BC850AMTF BC850CMTF Marking 8AA 8AB 8AC 8BA 8BB 8BC 8CB 8CC 8EA 8EC Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Ree.

BC850A : BC846 ... BC850 BC846 ... BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO = 30...65 V Ptot = 250 mW Version 2015-10-30 ~ SOT-23 (TO-236) 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 1 1.9±0.1 2 1.1+0.1 -0.2 2.4 ±0.2 1.3±0.1 ELV Typical Applications Signal processing, Switching, Amplification Commercial grade 1 Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu .

BC850A : UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION  FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 BC860  ORDERING INFORMATION Ordering Number BC846G-x-AE3-R BC847G-x-AE3-R BC848G-x-AE3-R BC849G-x-AE3-R BC850G-x-AE3-R BC846G-x-AL3-R BC847G-x-AL3-R BC848G-x-AL3-R BC849G-x-AL3-R BC850G-x-AL3-R BC846G-x-AN3-R BC847G-x-AN3-R BC848G-x-AN3-R BC849G-x-AN3-R BC850G-x-AN3-R Note: Pin Assignment: C: Collector B: Base Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 E: Emitter Pin Assignment 123 EBC EBC EBC EBC EBC E.

BC850ALT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D www.DataSheet4U.com General Purpose Transistors BC846ALT1,BLT1 BC847ALT1, NPN Silicon 1 BASE COLLECTOR 3 BLT1,CLT1 thru BC850ALT1,BLT1, CLT1 BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 2 EMITTER Unit V V V mAdc 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device.

BC850AW : only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to .




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