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BC859C


Part Number BC859C
Manufacturer Kexin
Title PNP Transistors
Description SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN compleme...
Features
● Low current (max. 100 mA)
● Low voltage (max. 45 V).
● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1
■ Ab...

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BC859 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features , VCE(sat)。 High current gain, Low collector-emitter saturation voltage. / Applications  General power amplifier application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 220~475 Marking H4A H4B http://www.fsbrec.com 1/6 BC859 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbo.

BC859 : SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage BC859 BC860 Collector - Emitter Voltage BC859 BC860 Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation (Note.1) Thermal Resistance From Junction to Ambient (Note.1) Junc.

BC859 : BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858, BC859 -VCEO Emitter Base Voltage -VEBO Collector Current -IC Peak Collector Current -ICM Power Dissipation Ptot Junction Temperature TJ Storage Temperature Range Tstg Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA BC856 BC857 .

BC859 : BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00) .110(2.80) .083(2.10) .066(1.70) MECHANICAL DATA Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : .006(.15)MAX .020(.50) .014(.35) .044(1.10) .035(0.90) .007(.20)MIN .103(2.60) .086(2.20) Unit: inch (mm) .006(.15) .002(.

BC859 : Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a B.

BC859 : BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Substrate Backside Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VCES -VEBO -IC -ICM -IBM IEM Ptot RθJ.

BC859 : DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. handbook, halfpage 3 3 MARKING TYPE NUMBER BC859B BC859C MARKING CODE(1) 4B* 4C* TYPE NUMBER BC860B BC860C Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. MARKING CODE(1) 4F* 4G* 1 Top view 1 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BC859B BC859C BC860B BC860C NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 16 2 NXP Semiconductors PNP general purpose transistors Product data sheet BC859; BC860 LIMITING VALUES In accordance with the Absolute Maximum Rating .

BC859 : BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO Emitter-Base Voltage IC Collector Current (DC) PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor.

BC859 : .

BC859 : BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollek.

BC859 : SEMICONDUCTOR TECHNICAL DATA BC859/860 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. For Complementary with NPN Type BC849/850 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage BC859 BC860 VCBO -30 -50 Collector-Emitter Voltage BC859 BC860 VCEO -30 -45 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC PC * Tj Tstg -5 -100 350 150 -55 150 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mW Q ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage BC859 BC860 V(BR)CE.

BC859 : BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Collector-Base Voltage BC856 BC857 BC858,BC859 Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V V V mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C.

BC859-AU : BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case: SOT-23 Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram Marking: Device Marking: BC856A-AU=56A BC857A-AU=57A BC858A-AU=58A BC856B-AU=56B BC857B-AU=57B BC858B-AU=58B BC859B-AU=59B BC857C-AU=57C BC858.

BC859A : BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858, BC859 -VCEO Emitter Base Voltage -VEBO Collector Current -IC Peak Collector Current -ICM Power Dissipation Ptot Junction Temperature TJ Storage Temperature Range Tstg Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA BC856 BC857 .

BC859A : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features , VCE(sat)。 High current gain, Low collector-emitter saturation voltage. / Applications  General power amplifier application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 220~475 Marking H4A H4B http://www.fsbrec.com 1/6 BC859 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbo.

BC859A : BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Substrate Backside Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VCES -VEBO -IC -ICM -IBM IEM Ptot RθJ.

BC859A : PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 Pin Configuration 123 BEC Package1) SOT-23 1)For de.




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