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BCW61C Datasheet PDF


Part Number BCW61C
Manufacturer Infineon
Title PNP Silicon AF Transistors
Description PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low nois...
Features ...

File Size 551.20KB
Datasheet BCW61C PDF File








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BCW29 : PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. MARKING TYPE NUMBER BCW29 BCW30 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) C1∗ C2∗ Top view handbook, halfpage BCW29; BCW30 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline SOT23 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature opera.

BCW29 : BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Bas.

BCW29 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current IC -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -65ᴕ150 * : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm. UNIT V V V mA mW ᴱ ᴱ A G H D BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.2.

BCW29 : SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Peak collector current ICM Peak base current IBM Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Operating ambient temperature Ramb Thermal resistance from junction to ambient * Rth j-a * Transistor mounted on an FR4 printed-circuit board. Rating -32 -32 -5 -100 -200 -200 250.

BCW29 : .

BCW29 : BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, T/\ = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient RflJA mm•Package mounted on 99.5% alumina 10 x 8 x 0.6 Value 20... 30 5,0 100 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) I OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Vol.

BCW29 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 .

BCW29LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW29LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER BCW29LT1 BCW30LT1 3 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temp.

BCW29LT1 : LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC 2 BASE Value –32 –32 –5.0 –100 1 EMITTER Unit Vdc Vdc Vdc mAdc BCW29LT1 BCW30LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg.

BCW30 : BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s Marking C2 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V CBO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -32 -32 -32 -5 -0.1 -0.2 300 -65 to 150 150 Unit V V V V A A mW o .

BCW30 : BCW30 BCW30 PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. 3 2 1 SOT-23 Mark: C2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector current - Continuous TJ, Tstg Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -32 -32 -5.0 -500 -55 ~ +150 NOTES: 1) These ratings are based on a maximum.

BCW30 : PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. MARKING TYPE NUMBER BCW29 BCW30 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) C1∗ C2∗ Top view handbook, halfpage BCW29; BCW30 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline SOT23 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature opera.

BCW30 : BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Bas.

BCW30 : PNP General Purpose Amplifier FEATURES z Low current. z Low voltage. Pb Lead-free APPLICATIONS z General purpose switching and amplification . z NPN complements:BCW32. Production specification BCW30 ORDERING INFORMATION Type No. Marking BCW30 C2X SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PD Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature -32 -32 -5 -100 300 -65 to +150 Unit V V V mA mW ℃ C103 Rev.B www.gmicroelec.com 1 Production specification PNP General Purpose Amplifier BCW3.

BCW30 : Features: tIdeally suited for automatic insertion tEpitaxial planar die construction Applications: t and switching applications BCW30 SOT-23 Ordering Information Type No. BCW30 Marking: C2X Maximum Ratings & Characteristics: Tamb=25o Parameter: Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Package Code: SOT-23 Symbol: VCBO VCEO Vebo IC PD RBJA Tj, Tstg Value: -32 -32 -5 -100 300 417 -55 to +150 Unit: V V V mA mW oC/W oC Maximum Ratings & Characteristics: Tamb=25o Parameter: Collector - Base Breakdown Voltage Collector - E.

BCW30 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, BCW32 。 Low current, low voltage, complements to BCW32. / Applications 。 General purpose switching and amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Range Marking 215~500 HC2 http://www.fsbrec.com 1/6 BCW30 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol .

BCW30 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current IC -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -65ᴕ150 * : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm. UNIT V V V mA mW ᴱ ᴱ A G H D BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.2.




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