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2N5088

Samsung

NPN EPITAXIAL SILICON TRANSISTOR

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N508...


Samsung

2N5088

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Description
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.5 50 625 150 -55 ~ 150 Unit V V V V mA m&&W TO-92 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 %Collector-Emitter Breakdown :2N5089 Voltage :2N5088 :2N5089 Collector Cut-off Current :2N4403 :2N4402 Base Cut-off Current %DC Current Gain :2N5088 :2N5089 :2N5088 :2N5089 :2N5088 :2N5089 %BCaosllee-cEtomr-iEttemritSteartuSraattuiornatVioonltVagoeltage Current-Base Capacitance BVCBO BVCEO ICBO IEBO hFE VCE (sat) VBE (on) COB Current ...




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