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RB501V-40


Part Number RB501V-40
Manufacturer LITE-ON
Title SURFACE MOUNT SCHOTTKY BARRIER DIODE
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE RB501V-40 REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Extremely low VF drop • Very S...
Features
• Extremely low VF drop
• Very Small Conduction Losses MECHANICAL DATA
• Case: SOD-323 Plastic
• Case Material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Lead Free in RoHS 2002/95/EC Compliant SOD-323 SOD-323 Dim...

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RB501V-40 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes RB501V -40 Schottky Barrier Diode FEATURES z Low current rectifier schottky diode z Low voltage, low inductance z For power supply MAKINGM: 4 SOD-323 The marking bar indicates the cathode Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Mean rectifying current CNuornr-ernetp@etti=ti8v.e3mPseak Forward Surge IO IFSM Power dissipation PD Thermal Resistance Junction to Ambient RθJA Junction temperature Tj Storage temperature Tstg Limit 45 40 0.1 1 200 500 125 -55~+150 Unit V V A A mW ℃/W ℃ ℃ Electrical R.

RB501V-40 : Schottky Barrier Diode RB501V-40 lApplication Low current rectification lDimensions (Unit : mm) 1.25±0.1 0.1±0.1   0.05 Datasheet lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2   0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lTaping specifications (Unit : mm) Cathode Anode lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz・1cyc) IFSM Junction temp.

RB501V-40 : Production specification Schottky Barrier Diode FEATURES  High current rectifier schottky diode  Low voltage; Low inductance  For power supply Pb Lead-free RB501V-40 APPLICATIONS  High frequency rectification ORDERING INFORMATION Type No. Marking RB501V-40 4 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 45 DC reverse voltage VR 40 Mean rectifying current IO 0.1 Peak forward surge current IFSM 1 Junction temperature Tj 125 Storage temperature Tstg -40 to+125 Unit V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse cu.

RB501V-40 : ® WON-TOP ELECTRONICS RB501V-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C A B Mechanical Data  Case: SOD-323, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.004 grams (approx.)  Marking: 4  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E J D H G SOD-323 Dim Min Max A 2.30 2.75 B 1.60 1.80 C 1.15 1.35 D 0.25 0.40 E 0.09 0.18 G 0.20 0.40 H 0.80 1.15 J —.

RB501V-40 : SURFACE MOUNT SCHOTTKY DIODES FEATURES  LOW CURRENT RECTIFICTAION  SMALL SURFACE MOUNTING TYPE.  HIGHT RELIABILITY.  PB-FREE PACKAGE IS AVAILABLE. RB501V-40 MECHANICAL DATA  CASE:SOD-323,PLASTIC  APPROX. WEIGHT: 0.00465 GRAM  Pb Free: RB501V-40 Halogen Free: RB501V-40-H CASE:SOD-323 DIMENSIONS IN MILLIMETERS AND (INCHES) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. PARAMETER SYMBOL PEAK REVERSE VOLTAGE DC REVERSE VOLTAGE MEAN RECTIFYING CURRENT PEAK FORWARD SURGE CURRENT(60Hz 1CYC) JUNCTION TEMPERATURE V RRM VR IO IFSM TJ STORAGE TEMPERATURE T STG ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTE.

RB501V-40 : Features * Small surface mounting type * High reliability * Low current rectification * Marking Code: "S7" RB501V-40 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G F Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range SOD-323F INCHES MM DIM MIN MAX MIN MAX A 0.091 0.110 2.30 2.80 B 0.045 0.053 1.15 1.35 C 0.063 0.071 1.60 1.80 D 0.010 0.016 0.25 0.40 E 0.031 0.043 0.80 1.10 F 0.004 0.006 0.10 0.15 G 0.016 0.024 0.41 0.61 Symbol VRM VR IO IFSM Tj Tstg Value 45 40 0.1 1 125 - 40 .

RB501V-40 : Cathode Anode 2 Applications • Low current rectification 1 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature www.DataSheet.co.kr Symbol VRM VR IO IFSM Tj Ts Value 45 40 0.1 1 125 - 40 to + 125 Unit V V A A O C C Storage Temperature Range O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Symbol VF VF IR CT Typ. 6 Max. 0.55 0.34 30 Unit V V µA pF Note: ESD sensitive produ.

RB501V-40 : SMD Type Schottky barrier diode RB501V-40 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Small surface mounting type.(UMD2) Low VF.(VF = 0.43V Typ.at 100mA) High reliability. 0.475 +0.1 2.6-0.1 1.0max 0.375 Absolute Maximum Ratings Ta = 25 Characteristic Peak reverse voltage DC reverse Volatge Mean rectifying current Peak forwrad surge current* Junction temperature Storage temperature *60Hz for 1 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 0.1 www.DataSheet.co.kr Unit V V A A 1 125 -40 to +125 Electrical Characteristics Ta = 25 Characteristic Forward Voltage Forward Voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR CT Condition IF = 100 mA IF = 10 mA VR = 10 V VR = 10 V.

RB501V-40 : TAK CHEONG ® SEMICONDUCTOR 200mW SOD-323 SURFACE MOUNT Absolute Maximum Ratings Symbol PD TSTG TJ VRM VR IF(AV) IFSM Power Dissipation TA = 25°C unless otherwise noted Value 200 -65 to +125 +125 40 40 100 1 Units mW °C °C V V mA A Parameter Storage Temperature Range Operating Junction Temperature Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Average Forward Rectified Current Peak Forward Surge Current (8.3mS Single Half-wave) These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ Low Forward Voltage Drop Flat Lead SOD-323 Small Outline Plastic Package Surface Device Type Mounting RoHS Compli.

RB501V-40 : RB501V-40 Features • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) • Small Surface Mounting Type • Low Reverse Current And Low Forward Voltage • High Reliability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 Maximum Ratings • Operating Junction Temperature Range: -55°C to +125°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 500°C/W Junction to Ambient MCC Part Number Device Marking RB501V-40 4 Maximum Recurrent Peak Reverse Voltage 45V Maximum DC Blocking Voltage 40V Electrical Characteristics @ 25°C Unless Otherwise Specified Mean Rectifying .

RB501V-40 : RB501V-40 Schottky Diodes FEATURES z High current rectifier Schottky diode z Low voltage, low inductance z For power supply MAKING: 4 Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg www.DataSheet.co.kr Limits 45 40 0.1 1 125 -55~+125 Unit V V A A ℃ ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 6 Min. Typ. Max. 0.55 0.34 30 Unit V µA pF Conditions IF=100mA IF=10mA VR=10V VR=10V, f=1MHZ Datasheet pdf - http://www.DataSheet4U.n.

RB501V-40 : BL Galaxy FEATURES z z z Electrical Production specification Schottky Barrier Diode High current rectifier schottky diode. Low voltage;Low inductance. For power supply. RB501V-40 Pb Lead-free APPLICATIONS z High frequency rectification. SOD-323 ORDERING INFORMATION Type No. RB501V-40 Marking 4 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits www.DataSheet.co.kr Unit V V A A ℃ ℃ unless otherwise specified Max. 0.55 0.34 30 6 Unit V μA pF Conditions IF=100mA IF=10mA VR=10v VR=10V,f=1MHz .

RB501V-40 : The UTC RB501V-40 is a surface mount schottky diode, it uses UTC’s advanced technology to provide the customers with high switching speed and low forward voltage, etc. The UTC RB501V-40 is suitable for automatic insertion, etc.  FEATURES * High switching speed * Low forward voltage  SYMBOL DIODE  ORDERING INFORMATION Ordering Number RB501VG-40-CB2-R Note: Pin Assignment: A: Anode K: Cathode Package SOD-323 Pin Assignment 12 AK Packing Tape Reel  MARKING 51G www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-084.c RB501V-40 Preliminary DIODE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Maximum Reverse Voltage RMS Reverse Voltage .

RB501V-40 : RB501V-40 Schottky Barrier Diode FEATURES z High current rectifier schottky diode z Low voltage; Low inductance z For power supply Pb Lead-free APPLICATIONS z High frequency rectification ORDERING INFORMATION Type No. Marking RB501V-40 4 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 45 DC reverse voltage VR 40 Mean rectifying current IO 0.1 Peak forward surge current IFSM 1 Junction temperature Tj 125 Storage temperature Tstg -40 to+125 Unit V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Capacitance between.

RB501V-40 : only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such appli.

RB501V-40 : RB501V-40 Schottky Diodes SOD-323 Features Low current rectifier Schottky diode Low voltage, low inductance For power supply Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Maximum Ratings Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 -55~+125 Unit V V A A ℃ ℃ Electrical Ratings Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. Typ. Max. 0.55 0.34 30 6 Unit V μA pF Conditions IF=100mA IF=10mA.




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