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BAS28 Datasheet PDF

Diodes
Part Number BAS28
Manufacturer Diodes
Title DUAL SURFACE MOUNT FAST SWITCHING DIODE
Description Features  Fast Switching Speed  For General Purpose Switching Applications  Two Electrically Isolated Elements in a Single Compact Package  To...
Features
 Fast Switching Speed
 For General Purpose Switching Applications
 Two Electrically Isolated Elements in a Single Compact Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability B...

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BAS28 BAS28 BAS28




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BAS100ATB6 : BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 100 Volts FEATURES • Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-563, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx. Weight: 0.0001 ounces, 0.0026 grams • Marking: BW ABSOLUTE MAXIMUM RATINGS (TA=25OC unless otherwise noted) PARAMETER S YMB OL Maxi mum Recurrent Peak Reverse Voltage V RRM Maxi mum RMS Voltage V RMS Maxi mum D C Blocking Voltage VR Maxi mum Average Forward Rectifi ed C urrent IF (AV ) Maxi mum For.

BAS101 : High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP BAS101 SOT23 BAS101S SOT23 JEITA - Configuration single dual series 1.2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications „ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage tr.

BAS101S : High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP BAS101 SOT23 BAS101S SOT23 JEITA - Configuration single dual series 1.2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications „ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage tr.

BAS11 : Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotec™(1) technology. (1) Implotec is a trademark of Philips. MAM196 Marking code BAS11: S11. Marking code BAS12: S12. Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAS11 BAS12 VRWM working reverse voltage BAS11 BAS12 VR continuous reverse voltage BAS11 BAS12 IF(AV) average forward current averaged over any 20 ms period; Ttp = 75 °C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; Tamb = 30 °C; PCB mounting (see Fig.8); see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sin.

BAS116 : Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. • AEC-Q101 qualified 3. Applications • Low leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF VRRM forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C repetitive peak reverse Tj = 25 °C voltage VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;.

BAS116 : Features  Surface Mount Package Ideally Suited for Automated Insertion  Very Low Leakage Current  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ BAS116Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/ BAS116 SURFACE MOUNT LOW LEAKAGE DIODE Mechanical Data  Package: SOT23  Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over .

BAS116 : Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS116... BAS116 !  Type BAS116 Package SOT23 Configuration single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 54°C Junction temperature Storage temperature Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point2) BAS116 Symbol RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please.

BAS116 : SMD Type Low-leakage diode BAS116 Diodes Features Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 ìs Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Total power dissipation Storage temperature Junction .

BAS116 : SURFACE MOUNT FAST SWITCHING DIODE BAS116 REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.2 Ampere FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Moisture sensitivity: Level 1 per J-STD-020D • Lead free in RoHS 2002/95/EC compliant SOT-23 SOT-23 Dim. Min. Max. A 0.90 1.15 A1 0.00 0.10 b 0.30 0.50 c 0.08 0.15 D 2.80 3.00 E 2.25 2.55 E1 1.20 1.40 e 0.95 Typ. e1 1.80 2.00 L 0.55 Ref. L1 0.30 0.50 Dimensions in millimeter Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherw.

BAS116 : ® WON-TOP ELECTRONICS BAS116 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Very Low Leakage Current  High Conductance  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-23, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (approx.)  Mounting Position: Any  Marking: JV  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A ED H G TOP VIEW C J L M SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.1.

BAS116 : only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree t.

BAS116 : Pinout Figure BAS116 1 BAW156 5 BAV170 4 Marking Code PA P4 P3 VR VRRM IF(AV) IFSM PD RthJA TJ, TSTG Reverse Voltage Peak Reverse Voltage Average Rectified Continuous Forward Current Non-Repetitive Peak Forward Surge Current at t=1µS Power Dissipation FR-5 Board Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range 75 100 0.2 2.0 250 500 -55 to +150 BAV199 3 PB Unit Conditions V V A A mW Note 1 ° C/W Note 1 °C Note: 1: FR-5=1.0X0.75X0.062” TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/CH Page 1 of 4 Three Terminals SMD Low Leak.

BAS116-AU : BAS116 -AU /BAW156 -AU /BAV170 -AU /BAV199 -AU SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz Acqire quality system certificate : TS16949 0.120(3.04) 0.110(2.80) 100 Volts POWER 250mWatts SOT-23 Unit:inch(mm) • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DATA • Case: SOT-23 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.0084 grams • Marking: BAS116-AU: .

BAS116GW : Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance: Cd = 2 pF • Small SMD plastic package • AEC-Q101 qualified 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR reverse voltage Tj = 25 °C VF forward voltage IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 2.

BAS116H : Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features s Small and flat lead SMD plastic package s Low leakage current 1.3 Applications s General-purpose switching 1.4 Quick reference data Table 1: Symbol IF VR IR Quick reference data Parameter forward current reverse voltage reverse current VR = 75 V Conditions Min Typ 0.003 Max 215 75 5.0 Unit mA V nA Philips Semiconductors BAS116H 75 V, low leakage diode in small SOD123F package 2. Pinning information Table 2: Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym001 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3: Ordering informati.

BAS116H : Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Small and flat lead SMD plastic package  Low leakage current  Excellent coplanarity and improved thermal behavior  AEC-Q101 qualified 1.3 Applications  General-purpose switching 1.4 Quick reference data Table 1. Symbol IF IR VR trr Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time Conditions VR = 75 V Min [1][2] - [3] - Typ 0.003 0.8 Max 215 5.0 75 3.0 Unit mA nA V s [1] Pulse test: tp  300 s;   0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copp.

BAS116L : BAS116L Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1G to order the 7 inch/3,000 unit reel • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR IF IFM(surge) 75 200 500 Vdc mAdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 2.




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