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BD139


Part Number BD139
Manufacturer Toshiba
Title Silicon NPN Transistor
Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with...
Features . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25...

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BD130 : BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEX IC IB PT Collector-Emitter Voltage Collector-Base Voltage Ratings Collector-Emitter Voltage Collector Current Base Current TJ w w w .D t a S a e h t e U 4 .c m o Value 60 100 100 15 7 Unit V V V A A Watts VBE=-1.5 V Power Dissipation @ TC = 45° 100 Junction Temperature -55 to +200 TS Storage Temperature °C COMSET .

BD130 : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

BD13003B : Elektronische Bauelemente BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Switching Applications TO-126 CLASSIFICATION OF tS Product-Rank Range BD13003B-A1 2-2.5 (µs) BD13003B-A2 2.5-3 (µs) 1Emitter 2Collector 3Base MARKING ․13003 ․=Solid dot *Solid dot=Green molding compound device, if none, the normal device. A E F N L M K B H C D ORDER INFORMATION Part Number Type Collector 2 G J BD13003BBD13003B- -C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base * =Rank 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) REF. A B C D E F G Millimeter Min. Ma.

BD131 : ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 70 V 45 V 6 V 3 A 6 A 0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHAR.

BD131 : handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 60 °C CONDITIONS open emitt.

BD131 : NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD132 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PT TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Reverse base current (peak value) Total power Dissipation Junction Temperature Storage Temperature IC ICM IBM IBM @ Tmb = 60°C Value 45 45 4 3 6 0.5 0.5 15 150 -65 to +150 Unit V V V A A W °C °C www.DataSheet.net/ THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to mouting base Valu.

BD132 : ·Complement to type BD131 ·With TO-126 package ·High current (Max:- 3A) ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb560 Open emitter Open base Open collector CONDITIONS VALUE -45 -45 -4 -3 -6 -0.5 15 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Ther.

BD132 : PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132 are PNP transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD131 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO IC IB PT TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Reverse base current (peak value) Total power Dissipation Junction Temperature Storage Temperature -IC -ICM -IBM -IBM @ Tmb = 60°C Value 45 45 4 3 6 0.5 0.5 15 150 -65 to +150 Unit V V V A A Watts °C °C www.DataSheet.net/ THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to moutin.

BD132 : isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 15 W.

BD1321G : BD1321G is a single low voltage operational amplifier with full swing output. It is the most effective solution for applications requiring low supply current consumption and low voltage operation. Key Specifications  Operable supply voltage (single supply): +2.7V to +5.5V 130µA(Typ)  Supply Current: 1.0V/µs(Typ)  Slew Rate:  Temperature Range: -40°C to +85°C 5nA (Typ)  Input Offset Current:  Input Bias Current: 15nA (Typ) Features      Operable with Low Voltage Input Ground Sense, Output Full Swing High Open Loop Voltage Gain Low Supply Current Low Input Offset Voltage Packages SSOP5 W(Typ) x D(Typ) x H(Max) 2.90mm x 2.80mm x 1.25mm Applications  Portable Equipment  Low Vo.

BD134 : ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 13 W 150 ℃ Tstg Storage Temperature Range -55~150 .

BD135 : These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. 1 2 3 SOT-32 Figure 1. Internal schematic diagram NPN Table 1. Device summary Order codes BD135 BD135-16 BD136 BD136-16 BD139 BD139-10 BD139-16 BD140 BD140-10 BD140-16 Marking BD135 BD135-16 BD136 BD136-16 BD139 BD139-10 BD139-16 BD140 BD140-10 BD140-16 May 2008 Rev 5 Package SOT-32 PNP Packaging Tube 1/9 www.st.com 9 Contents Contents BD135 - BD136 - BD139 - BD140 1 Electrical ratings . . .

BD135 : BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 Package TO-126 3L Packing Method Bulk Rail Bulk Rail Bulk Rail © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 1 www.fairchildsemi..

BD135 : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTER.

BD135 : ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 45V(Min) ·Complement to type BD136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 1..

BD135 : The UTC BD135 is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with high DC current gain, etc.  FEATURES * high DC current gain  ORDERING INFORMATION Ordering Number BD135G-xx-AA3-R Note: Pin Assignment: B: Base C: Collector Package SOT-223 E: Emitter Pin Assignment 123 BCE Packing Tape Reel BD135G-xx-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package (1) R: Tape Reel, K: Bulk (2) AA3: SOT-223, T60: TO-126 (3) refer to CLASSIFICATION OF hFE3 (4) G: Halogen Free and Lead Free, L: Lead Free  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-037.a BD135 Preliminary NPN EPITAXIAL SILIC.

BD135 : BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 Package TO-126 3L Packing Method Bulk Rail Bulk Rail Bulk Rail © 2007 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Publication Order Number: BD139/D .




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