DatasheetsPDF.com

2SD1166


Part Number 2SD1166
Manufacturer Toshiba
Title NPN Transistor
Description : SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATION AC & DC MOTOR CONTROL APPLICATION INVERTER APPLICATIO...
Features . High Voltage : VCE0 (SUS) 900V . Triple Diffused Design . Darlington Design Unit in mm 2-0&2±U2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Thermal Resistance (Double Side Cooling) ...

File Size 116.35KB
Datasheet 2SD1166 PDF File








Similar Ai Datasheet

2SD1160 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC IC 2 A Pulse ICP 4 Diode forward surge current (t = 1 s) IFP 1A Collector power dissipation Ta = 25°C Tc = 25°C PC 1 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEIT.

2SD1162 : ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 40 W 1.5 150 ℃ Tstg Storage Temperature.

2SD1163 : 2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 –55 to +150 2SD1163A 350 150 6 7 10 20 40 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD1163 I.

2SD1163 : ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1163 isc website:www.iscsemi.com 1 isc .

2SD1163 : h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 150 6 7 10 20 40 150 -55~150 V A A A W Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Tr.

2SD1163 : To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and c.

2SD1163 : 2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Absolute maximum ratings (Ta=25¡æ ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Coll.

2SD1163A : 2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 –55 to +150 2SD1163A 350 150 6 7 10 20 40 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD1163 I.

2SD1163A : ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1163A isc website.

2SD1163A : h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 150 6 7 10 20 40 150 -55~150 V A A A W Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Tr.

2SD1163A : To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and c.

2SD1163A : 2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Absolute maximum ratings (Ta=25¡æ ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Coll.

2SD1164-Z : .

2SD1164-Z : R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000 R ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2 4 2.0 150 −55 to +150 UNIT V V V A A W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature PT Tj Tstg Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The mark R s.

2SD1165A : SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. MOTOR CONTROL APPLICATION. FEATURES . High Voltage : CE0 (SUS) 900V . Triple Diffused Design • Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Thermal Resistance (Double Side Cooling) Junction Temperature Storage Temperature Mounting Force Required SYMBOL VCBO vCEO(SUS) Vebo ic IE IB R th(j-c) RATING 1000 900 6 100 -100 12 0.08 T.i Tstg F 125 -40-150 500±50 UNIT V V V A A A °C/W °C °C kg INDUSTRIAL APPLICATIONS Unit in mm 2 -04.0 ±0..

2SD1168 : ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 10 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)