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2SC2563 Datasheet PDF


Part Number 2SC2563
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 1) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1 2SC2563 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. features: . Complementary to 2SA1093. . ...
Features . Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ. Unit in mm 159MAX ^3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Col...

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Datasheet 2SC2563 PDF File








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2SC2561 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SC2562 : ·Low Collector Saturation Voltage :VCE(sat)= 0.4(V)(Max)@IC= 3A ·High Switching Speed ·Complement to Type 2SA1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trade.

2SC2562 : : I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE(sat)=0-^v Max -) at IC=3A) • High Speed Switching Time : t stg=1.0ys (Typ.) • Complementary to 2SA1012. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25*C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO v EBO ic pc T i T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING 60 50 5 5 25 150 -55vL50 UNIT V V V A W °C °c 2.54 W 2.54 23 € CO 1. BASE 2. COLLECTOR(HEAT .

2SC2562 : ·With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 5 1 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Sil.

2SC2563 : ·High power dissipation ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi..

2SC2563 : ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 120 5 8 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=.

2SC2564 : ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2564 isc website:www.iscsemi.com 1 isc &.

2SC2564 : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=140V • High Transition Frequency : fT=90MHz (Typ.) • Complementary to 2SA1094. • Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V,CBO VCEO v EBO PC stg RATING 140 140 12 -12 120 150 -55vL50 UNIT °C *fe^W^S 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER Weight : 10. 34 A 1 A ELECTRICAL CHARACTERIS.

2SC2564 : ·With MT-200 package ·Complement to type 2SA1094 ·High transition frequency APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 12 1.2 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silico.

2SC2565 : ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1095 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2565 isc website:www.iscsemi.com 1 isc & iscsemi is .

2SC2565 : 2SC2565 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : V CEO=160V • High Transition Frequency : f T=80MHz (Typ.) • Complementary to 2SA1095. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V CBO VcEO VEBO ic PC L stg RATING 160 160 UNIT 15 -15 150 150 °C -55M.50 fefJTT^H^ L BASE Z COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA 2 - 34 A 1A Weigh.

2SC2565 : ·With MT-200 package ·Complement to type 2SA1095 ·High transition frequency APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 15 1.5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silico.




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