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2N5641


Part Number 2N5641
Manufacturer HGSemi
Title HG RF POWER TRANSISTOR
Description HG Semiconductors 2N5641HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condi...
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2N5640 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching N–Channel — Depletion Order this document by 2N5640/D 2N5640 1 DRAIN 3 GATE 2 SOURCE Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage Reverse Gate–Source Voltage VDG VGSR 30 30 Vdc Vdc Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C IGF PD 10 mAdc 350 mW 2.8 mW/°C Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range RqJA TJ Tstg 357 – 65 to +150 – 65 to +150 °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate.

2N5640 : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 w w w .D a S a t e e h U 4 t m o .c .

2N5640 : n-channel JFETs designed for • • • H Siliconix Performance Curves NCB/NZB See Sedion 4 • Analog Switches • Commutators • Choppers *~ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Source Breakdown Voltage .... 30V Drain-Gate Breakdown Voltage ..... 30V Source-Gate Breakdown Voltage ..... 30V Forward Gate Current 10mA .Total Device Dissipation Derate above 25°e .a.t.T.L.E..A.D..=.2..5.°e. ... 625mW 5.68 mWre Operating Junction Temperature Range ..... -65 to +135°e Storage Temperature Range .. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ... 3000 e BENEFITS • Low Cost • Industry St.

2N5641 : 2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Powe.

2N5641 : .

2N5641 : www.DataSheet4U.com www.DataSheet4U.com .

2N5642 : 2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Powe.

2N5642 : .

2N5642 : www.DataSheet4U.com www.DataSheet4U.com .

2N5642 : The ASI 2N5642 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: • Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package MAXIMUM RATINGS IC 3.0 A VCE 35 V VCB PDISS TJ TSTG θJC 65 V 30 W @ TC = 25 OC -65 OC to + 200 OC -65 OC to + 150 OC 5.8 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCES IC = 200 mA BVCEO IC = 200 mA BVEBO IE = 10 mA ICBO VCB = 30 V hFE VCE = 5.0 V IC = 200 mA MINIMUM TYPICAL MAXIMUM 65 35 4.0 1.0 5.0 UNITS V V V mA --- COB VCB = 30 V f = 1.0 MHz 35 pF PG ηC VCC =28 V POUT = 20 W f = 175 MHz 8.2 60 10 d.

2N5642 : HG Semiconductors HG RF POWER TRANSISTOR 2N5642 ROHS Compliance,Silicon NPN POWER TRANSISTOR These Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 .

2N5643 : 2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Powe.

2N5643 : .

2N5643 : www.DataSheet4U.com www.DataSheet4U.com .

2N5643 : The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. PACKAGE STYLE .380 4L STUD .112x45° A B C E ØC FEATURES: • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System www.DataSheet4U.com E B I J D H #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 5.0 A DIM MINIMUM inches / mm MAXIMUM inches / mm 65 V 35 V 4.0 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 2.9 °C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175.

2N5644 : 2NS644 (SILICON) NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Volt, UHF large signal amplifier applications reo quired in industrial and consumerFMequipmentoperating to520 MHz. • Low lead inductance stripline package for ease of design and in· creased broadband capability • Balanced Emitter Construction to protect against device damage due to load mismatch • Specified 12.5 Volt, 470 MHz Characteristics Output Power = 1.0 Watt Minimum Gain = 7.0 dB Efficiency = 60% 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Oissipation@Tc=25oC Derate above 25°C Operating and Storage Junction Temperature Ran.




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