DTN11N50SJ Datasheet

DTN11N50SJ N-Channel Super Junction Power MOSFET

DTN11N50SJ/DTP11N50SJ/DTP11N50FSJ www.din-tek.jp N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 50 Qgs (nC) 6 Qgd (nC) 10 Configuration Single 0.380 TO-220AB TO-220 FULLPAK FEATURES • Low figu.

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Low gate charge (Qg)
• Avalanche energy rated (UIS) APPLICATIONS
• Computing - PC silver box / ATX power supplies
• Lighting - Two stage LED lighting
• Consumer electronics TO-247AC D GD S Top View GDS Top View S D G Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear De.