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1N831

Part Number 1N831
Manufacturer ASI
Title SILICON MIXER DIODE
Description The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: • High burnout resistance • Low noise f...
Features
• High burnout resistance
• Low noise figure
• Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF f = 3060 MHz PLO = 1.0 m...

File Size 66.34KB
Datasheet 1N831 PDF File







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