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1N3673AR

Part Number 1N3673AR
Manufacturer GeneSiC
Title Silicon Standard Recovery Diode
Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity:...
Features
• High Surge Capability
• Types from 800 V to 1000 V VRRM
• Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise sp...

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1N3673A : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.3 ms 1N3671A (R) 800 560 800 12 240 -55 to 150 -55 to 150 E.

1N3673A : 1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High surge capability • Low thermal impedance RoHS COMPLIANT • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) • RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) IFSM I2t TC VRRM Note (1) JEDEC registered values TC 50 Hz 60 Hz 50 Hz 60 Hz Range ELECTRICAL SPECIFICATIONS VALUES 12 (1) 150 (1) 230 240 (1) 260 240 - 65 to 200 50 to 1000 (1) VOLTAGE RATINGS TYPE NUMBER (2) VRRM, MAXIMUM REPETITIVE PEAK REVE.

1N3673A : .

1N3673A : .

1N3673A : 1N3670A-1N3673A High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol 1N3670 1N3671 1N3672 Repetitive peak reverse voltage VRRM 700V 800V 900V Maximum RMS reverse voltage VRMS 490V 560V 630V Non-repetitive peak reverse voltage VRSM 900V 1000V 1100V Average forward current IF(AV) 12A Maximum surge current 230A 240A IFSM 2.

1N3673A : www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com .

1N3673A : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

1N3673A : Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 1000.0 V 1000.0 V empty A 12.0 A empty A 240.0 A empty W 2.0 °C/W 150.0 °C NO. TYPE empty empty CASE empty empty 1N3673A SILICON empty empty DO-4_UNF CATHODE TO STUD empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. IR VR = 1000.0 V - 50.0 µA 2. IR VR = 1000.0 V, TJ = 125.0° C - 1.0 mA 3. VF IF = 12.

1N3673A-M : Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 1000.0 V 1000.0 V empty A 12.0 A empty A 240.0 A empty W 2.0 °C/W 150.0 °C NO. TYPE empty empty CASE empty empty 1N3673A-M SILICON empty empty DO-4_UNF MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. IR VR = 1000.0 V - 50.0 µA 2. IR VR = 1000.0 V, TJ = 125.0° C - 1.0 mA 3. V.

1N3673AR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .




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