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MV1632 Datasheet PDF


Part Number MV1632
Manufacturer Aeroflex
Title Silicon Abrupt Varactors
Description Silicon Abrupt Varactors: General Purpose Glass Axial Leaded MV1620 – MV1650 Model MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV16...
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Datasheet MV1632 PDF File








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MV1001SC : 1 (Ta=25℃) 1 Absolute Maximum Ratings (at Ta=25℃) 1-1 1-1 Thermal Ratings Item Storage temperature Junction temperature Total power dissipation   Symbol Tstg Tj Pt    Ratings -55~150 -40~150 1.5 Unit ℃ ℃ W 1-2 1-2 Electrical Ratings Item Vin Vin maximum applied voltage   Symbol Vin    Ratings 250 Unit V Vinバイアス Vin reverse bias voltage Vcc Vcc maximum applied voltage ----Vcc -0.5 V 22 V Vccバイアス Vcc reverse bias voltage ----- -0.5 V Svin, CS, REF Svin, CS, REF maximum applied voltage Svin, CS, REFバイアス Svin, CS, REF reverse bias voltage Vsvin, Vcs, Vref, ----- 5.5 V -0.5 V Svout Svout Into maximum current Isvout ±2 mA : にされていない、、のみわせでのはしていません。 されているのでする.

MV1002SC : 1 (Ta=25℃) 1 Absolute Maximum Ratings (at Ta=25℃) 1-1 1-1 Thermal Ratings Item Storage temperature Junction temperature Total power dissipation   Symbol Tstg Tj Pt    Ratings -55~150 -40~150 1.5 Unit ℃ ℃ W 1-2 1-2 Electrical Ratings Item Vcc Vcc maximum applied voltage   Symbol Vcc    Ratings 22 Unit V Vccバイアス Vcc reverse bias voltage ----- -0.5 V Svin, CS, REF Svin, CS, REF maximum applied voltage Vsvin, Vcs, Vref, 5.5 V Svin, CS, REFバイアス Svin, CS, REF reverse bias voltage ----- -0.5 V Svout Svout Into maximum current Isvout ±2 mA : にされていない、、のみわせでのはしていません。 されているのでするはずにまでごさい。 はなどのためにおりしにすることがあります。 Notes : Using with parameters, condition of use and logic .

MV1011SC : 1 (Ta=25℃) 1 Absolute Maximum Ratings (at Ta=25℃) 1-1 1-1 Thermal Ratings Item Storage temperature Junction temperature Total power dissipation   Symbol Tstg Tj Pt    Ratings -55~150 -40~150 1.5 Unit ℃ ℃ W 1-2 1-2 Electrical Ratings Item Vin Vin maximum applied voltage   Symbol Vin    Ratings 250 Unit V Vinバイアス Vin reverse bias voltage Vcc Vcc maximum applied voltage ----Vcc -0.5 V 22 V Vccバイアス Vcc reverse bias voltage ----- -0.5 V Svout, Svin, CS, REF Svout, Svin, CS, REF maximum applied voltage Svin, CS, REFバイアス Svin, CS, REF reverse bias voltage Vsvout, Vsvin, Vcs, Vref, ----- 5.5 V -0.5 V Svout Svout maximum current Isvout -2 mA : にされていない、、のみわせでのは.

MV1012SC : 1 (Ta=25℃) 1 Absolute Maximum Ratings (at Ta=25℃) 1-1 1-1 Thermal Ratings Item Storage temperature Junction temperature Total power dissipation   Symbol Tstg Tj Pt    Ratings -55~150 -40~150 1.5 Unit ℃ ℃ W 1-2 1-2 Electrical Ratings Item Vcc Vcc maximum applied voltage   Symbol Vcc    Ratings 22 Unit V Vccバイアス Vcc reverse bias voltage ----- -0.5 V Svout, Svin, CS, REF Svout, Svin, CS, REF maximum applied voltage Vsvout, Vsvin, Vcs, Vref, 5.5 V Svin, CS, REFバイアス Svin, CS, REF reverse bias voltage ----- -0.5 V Svout Svout maximum current Isvout -2 mA : にされていない、、のみわせでのはしていません。 されているのでするはずにまでごさい。 はなどのためにおりしにすることがあります。 Notes : Using with parameters, condition .

MV104 : ON Semiconductort Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. • High Figure of Merit  Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz • Guaranteed Capacitance Range 37–42 pF @ VR = 3.0 Vdc (MV104) • Dual Diodes – Save Space and Reduce Cost • Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range MV104 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junctio.

MV104 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. • High Figure of Merit  Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz • Guaranteed Capacitance Range 37–42 pF @ VR = 3.0 Vdc (MV104) • Dual Diodes – Save Space and Reduce Cost • Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range MV104 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE Pin 1 A1 Pin 2 C Pin 3 A2 1 2 3 CASE 29 – 04, STYLE 15 TO–92 (TO – 226AA) MAXIMUM RATINGS (EACH DIODE) Rating Sy.

MV10T45 : Features This low cost Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ● 150℃ Tj operation ● Low Power Loss, High Efficiency ● Low forward voltage drop ● High surge capacity ● Lead Free Finish/ROHS Compliant(Note 1) Case Styles TO-277 Ordering Information Part Number MV10T45 1、 ANODE 2、 CATHODE 3、 ANODE Package TO-277 Packaging Tape & Reel 1 of 4 MV10T45 Electrical Characteristics(Tamb=25℃) Characteristic Peak Repetitive Reverse Volta.

MV1401 : The ASI MV1401 is a Silicon HyperAbrupt Tuning Varactor Diode. FEATURES INCLUDE: • 14:1 Minimum Tuning Range • High Q - 400 Typical • Economical DO-7 Package PACKAGE STYLE D0-7 MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 250 mA 12 V 400 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C O O O NONE CHARACTERISTICS SYMBOL VBR IR Ct CT1/CT10 Q VR = 2.0 V IR = 10 µA VR = 10 V VR = 1.0 V TA = 25 C O TEST CONDITIONS MINIMUM 12 TYPICAL MAXIMUM 0.10 UNITS V µA pF ----- f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz 468 14 200 633 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change wi.

MV1403 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tuning Diodes These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. • High Capacitance: 120–250 pF • Large Capacitance Change with Small Bias Change • Guaranteed High Q • Available in Standard Axial Glass Packages 2 Anode 1 Cathode MV1403 MV1404 MV1405 120 – 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGE–VARIABLE CAPACITANCE DIODES 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 12 Vdc Forwa.

MV1403 : The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters Dim: A B D F K Min 5.84 2.16 0.46 --25.40 Max 7.62 2.72 0.56 1.27 38.10 Inches Min 0.230 0.085 0.018 --1.000 Max 0.300 0.107 0.022 0.050 1.500 MAXIMUM RATINGS I V PDISS TJ TSTG 12 V 250 mA 400 mW @ TA = 25 °C -65 °C to +125 °C -65 °C to +200 °C NONE CHARACTERISTICS SYMBOL VB IR Ct-2 Q LS CC TR Ct-2/Ct-10 IR = 10 µA VR = 10 V VR = 2.0 V VR = 2.0 V TA = 25 °C TEST CONDITIONS MINIMUM 12 TYPICAL MAXIMUM 0.1 UNITS V µA pF --nH pF --- f = 1.0 MHz f = 1.0 MHz f = 250 MHz f = 1.0 MHz f = 1.0 MHz 140 200 175 5..

MV1403 : The MV1403 PCM macrocell demonstrator contains a family of 4 Transmit PCM and 4 Receive PCM macrocells which may be configured to function individually, or be connected together to form demonstrations of their operation. In order to keep the pin count to a minimum, some of the input and output pins are shared. Pin functions thus depend upon whether the device is configured as a transmitter or receiver. The operational modes of the MV1403 are selected under control of the MODE and DEMO pins, as shown in Table 1. Note that the MODE pin selects either the transmit or receive set of macrocells and that the DEMO pins selects either individual or combined connections. In addition the operation of .

MV1404 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tuning Diodes These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. • High Capacitance: 120–250 pF • Large Capacitance Change with Small Bias Change • Guaranteed High Q • Available in Standard Axial Glass Packages 2 Anode 1 Cathode MV1403 MV1404 MV1405 120 – 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGE–VARIABLE CAPACITANCE DIODES 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 12 Vdc Forwa.

MV1404 : The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters Dim: A B D F K Min 5.84 2.16 0.46 --25.40 Max 7.62 2.72 0.56 1.27 38.10 Inches Min 0.230 0.085 0.018 --1.000 Max 0.300 0.107 0.022 0.050 1.500 MAXIMUM RATINGS I V PDISS TJ TSTG 12 V 250 mA 400 mW @ TA = 25 °C -65 °C to +125 °C -65 °C to +200 °C NONE CHARACTERISTICS SYMBOL VB IR Ct-2 Q LS CC TR Ct-2/Ct-10 IR = 10 µA VR = 10 V VR = 2.0 V VR = 2.0 V TA = 25 C O TEST CONDITIONS MINIMUM 12 TYPICAL MAXIMUM 100 UNITS V µA pF --nH pF --- f = 1.0 MHz f = 1.0 MHz f = 250 MHz f = 1.0 MHz f = 1.0 MHz 96 200 120 5..

MV1405 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tuning Diodes These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. • High Capacitance: 120–250 pF • Large Capacitance Change with Small Bias Change • Guaranteed High Q • Available in Standard Axial Glass Packages 2 Anode 1 Cathode MV1403 MV1404 MV1405 120 – 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGE–VARIABLE CAPACITANCE DIODES 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 12 Vdc Forwa.

MV1405 : The ASI MV1405 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Dim: A B D F K Millimeters Min Max 5.84 7.62 2.16 2.72 0.46 0.56 --1.27 25.40 38.10 Inches Min 0.230 0.085 0.018 --1.000 Max 0.300 0.107 0.022 0.050 1.500 MAXIMUM RATINGS I V PDISS TJ TSTG O O 12 V 250 mA 400 mW @ TA = 25 C -65 C to +175 C -65 C to +200 C O O O NONE CHARACTERISTICS SYMBOL VB IR Ct-2 Q LS CC TR Ct-2/Ct-10 IR = 10 µA VR = 10 V VR = 2.0 V VR = 2.0 V TA = 25 C O TEST CONDITIONS MINIMUM 12 TYPICAL MAXIMUM 100 UNITS V µA pF --µH pF --- f = 1.0 MHz f = 1.0 MHz f = 250 MHz f = 1.0 MHz f = 1.0 MHz 200 200 250 5.0 0.25 300 10 A D V A N C E D S E M I C O N D U C T.

MV1441 : MV1441 ________________ ~!:~i~~~t:~ A_D_VA_N_C_E_IN_F_O_RM_A_T_IO_N Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have 'pre-production' status. Details given may, therefore, change without notice although we would expect this performance data to be representative of 'full production' status product in most cases. Please contact your local Plessey Semiconductors Sales Office for details of current status. 2MBIT PCM SIGNALLING CIRCUIT MV1441 HDB3 ENCODER/DECODER/CLOCK REGENERATOR The 2.048MBit PCM Signalling Circuits comprise a group of circuits which will perform the common signalling and error detection.

MV1442 : High Density Bipolar 3 (HDB3) is a pseudo-ternary transmission code in which the number of consecutive zeros which may occur is restricted to three to allow adequate clock recovery at the receiver. In any sequence of four consecutive binary zeros the last zero is substituted by a mark of the same polarity as the previous mark, thus breaking the Alternate Mark Inversion (AMI) code. This mark is termed a violation. In addition, the first zero may also be substituted by a mark if the last mark and last violation are of the same polarity. This mark does not violate the AMI code and ensures that successive violations alternate in polarity and as such introduce no DC component to the HDB3 signal..




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