Part Number PDS0966
Manufacturer Potens semiconductor
Title N-Channel MOSFETs
Description ...
Features ...

File Size 681.74KB
Datasheet PDS0966 PDF File

Similar Ai Datasheet

PDS0960 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G S SS G D S BVDSS 100V RDSON 18m ID 15A Features  100V,15A, RDS(ON) =18mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwis.

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)