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PDEU2320W Datasheet PDF

Potens semiconductor
Part Number PDEU2320W
Manufacturer Potens semiconductor
Title N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai...
Features
 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
 Worldwide Smallest Package : 1x0.6x0.45 mm
 Fast switching
 Green Device Available
 Suit for 1.2V Gate Drive Applications
 2KV HBM ESD Capability Applications
 Notebook
 Smartphone
 Battery Protection
 Hand-held Instruments Absolute Maximum Ratings T...

File Size 418.08KB
Datasheet PDF File PDEU2320W PDF File


PDEU2320W PDEU2320W PDEU2320W




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PDEU2320X : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT723 Pin Configuration D D G S G S PDEU2320X BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instrume.

PDEU2320Y : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT523 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolu.

PDEU2320Z : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT323 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolu.




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