DatasheetsPDF.com

6N80C

Fairchild Semiconductor

800V N-Channel MOSFET

FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December...



6N80C

Fairchild Semiconductor


Octopart Stock #: O-1315719

Findchips Stock #: 1315719-F

Web ViewView 6N80C Datasheet

File DownloadDownload 6N80C PDF File







Description
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS G...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)