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2N6292 Datasheet PDF


Part Number 2N6292
Manufacturer GE
Title NPN POWER TRANSISTORS
Description NPN POWER TRANSISTORS 2N6292 70 VOLTS 7 AMP, 40 WATTS .These general-purpose medium-power transistors are intended for a wide variety of medium-...
Features
• Low saturation voltages
• Thermal-cycling ratings
• Maximum safe-area-of-operation curves specified for dc operation. NPN COLLECTOR EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .404110.26] .~ ~~\;.~~\ .38019.651 .jI.-.Ii.
· . .---...1197001144..8331 211 ~ .05511.391...

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Datasheet 2N6292 PDF File








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2N6290 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.

2N6290 : ·With TO-220 package ·Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6288 VCBO Collector-base voltage 2N6290 2N6292 2N6288 VCEO Collector-emitter voltage 2N6290 2N6292 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance from junction to cas.

2N6290 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications N LH BF C E A OO 12 3 K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction t.

2N6290 : ·DC Current Gain- : hFE = 30-150@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) ·Complement to Type 2N6109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65.

2N6290 : The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6111 2N6109 2N6107 2N6288 2N6290 2N6292 40 60 80 30 50 70 5.0 7.0 10 3.0 40 -65 to +150 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless o.

2N6291 : File No. 676 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLlD Power Transistors Solid State Division 2NI5106-2N61111, 21M6288-21Nl6293, 2!N16413D 21i\'l6416 COliector 2N6106 2N6289 2N6108 2N6291 2N6110 2N6293 • ~ '\.---- Emitter ___ Base TO-220AA H-1534Rl lEpoftalltoal-lBase, S mean INI-P-INI and P-II\'I-rP VIEIRSAW A111" Trans istoll's General-Purpose Medium-Power Types for Switching and Amplifier Applications 2N6107 2N6288 2N6109 2N6290 2N6111 2N6292 2N6475 2N6473 2N6476 2N6474 A- Emitter ',4-- Collector Base H-1535Rl ,Features C Low saturation voltages " VERSAWATT package (molded silicone plastic) " Complementary n·p-n and p-n·p types " Thermal·cycling.

2N6291 : ·With TO-220 package ·Low collector saturation voltage ·Wide safe operating area APPLICATIONS ·For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6291 2N6293 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N6291 Collector-base voltage 2N6293 2N6291 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N6293 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 70 5 7 3 40 150 -65~150 V A A W Open emitter 80 50 V CO.

2N6291 : ·DC Current Gain- : hFE = 30-150@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERI.

2N6292 : 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO 30 50 70 Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCB Vdc 40 60 80 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 2.

2N6292 : ·With TO-220 package ·Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6288 VCBO Collector-base voltage 2N6290 2N6292 2N6288 VCEO Collector-emitter voltage 2N6290 2N6292 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance from junction to cas.

2N6292 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.

2N6292 : Power Transistor NPN Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Collector 3 2 Base 1 Emitter Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 70 80 5 7 3 40 -65 to +150 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page 1 24/04/13 V1.0 Power Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Curre.

2N6292 : The 2N6292 is a silicon NPN transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current−Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 70V Collector−Base Voltage, VCB 80V Emitter−Base Voltage, VEB .

2N6292 : ·DC Current Gain- : hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junct.

2N6292 : The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6111 2N6109 2N6107 2N6288 2N6290 2N6292 40 60 80 30 50 70 5.0 7.0 10 3.0 40 -65 to +150 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless o.

2N6292 : SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Collector Emitter Voltage (RBE= 100Ω) VCER Emitter Base Voltage Collector Current (Peak) Collector Current Continuous VEBO ICM IC Base Current IB Power Dissipation upto Tc=25ºC PD Derating factor above 25ºC Power Dissipation upto Ta=25ºC Derating factor above 25ºC PD Junction Temperature Tj Storage Temperature Tstg VALUE 80 70 80 5 10 7 3 40 0.32 2 16 150 - 65 to 150 UNIT V V V V A A A W W/ºC W mW/ºC ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 3.125 62.50 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITIO.




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