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2N6714 Datasheet PDF


Part Number 2N6714
Manufacturer GE
Title NPN POWER TRANSISTORS
Description NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES 92GU01,01A 2N6714,15 30-40 VOLTS 2 AMP, 1.2 WATTS Applications: • Class...
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Datasheet 2N6714 PDF File








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2N6714 : NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt 2N6714 2N6715 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 40 30 5 2 1 1 E-Line TO92 Compatible 2N6714 2N6715 50 40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collecto.

2N6714 : The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg JA JC 2N6714 2N6726 40 2N6715 2N6727 50 30 40 5.0 2.0 0.5 1.0 2.0 -65 to +150 125 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise note.

2N6714 : Collector Cutoff Current VCB=40V, IE=0 VCB=50V, IE=0 VCB=40V, IE=0 D.C. Current Gain IC=10mA, VCE=1V IC=100mA, VCE=1V IC=1A, VCE=1V Symbol 2N6714 2N6715 2N6716 ICBO 2N6714/67.

2N6714 : The 2N6714 is a silicon NPN power transistors in a TO−237 type package designed for general purpose power amplifier and switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . 40V Collector−Emitter Voltage, VCEO 30V Emitter−Base Voltage, VEBO . 5V Continuous Collector Current, IC . . .

2N6715 : NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt 2N6714 2N6715 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 40 30 5 2 1 1 E-Line TO92 Compatible 2N6714 2N6715 50 40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collecto.

2N6715 : NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES 92GU01,01A 2N6714,15 30-40 VOLTS 2 AMP, 1.2 WATTS Applications: • Class "8" audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits. NPN BAS~E~EMITTER COLLECTOR COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .105(2.67) .095(2.41) .050(1.27) ~. .La-~Tn.r---L SEATING PLANE .250(6.35) ~ ~or[ .018(.46).L.016(.41)] .016(.41) .016(.41) .014(.36) _ _ O0~ O~or [022(.561 & .020(.511 ] .016(.41) .016(.41) .014(.36) maxhnum ratings (TA = 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Base Voltage Emitt.

2N6715 : The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg JA JC 2N6714 2N6726 40 2N6715 2N6727 50 30 40 5.0 2.0 0.5 1.0 2.0 -65 to +150 125 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise note.

2N6715 : Collector Cutoff Current VCB=40V, IE=0 VCB=50V, IE=0 VCB=40V, IE=0 D.C. Current Gain IC=10mA, VCE=1V IC=100mA, VCE=1V IC=1A, VCE=1V Symbol 2N6714 2N6715 2N6716 ICBO 2N6714/67.

2N6716 : NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1 E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base B.

2N6716 : NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES 92GU05,06 2N6716,17 60-80 VOLTS 2 AMPS, 1.2 WATTS Applications: • High VCE ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VCEO • Exceptional power-to-price ratio NPN COLLECTOR EMITTER ~~~~~:::::BASE COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -r---i---"';~ .105(2.67) - r.095(2.41) .050(1.27) -.-L =maximum ratings (TA 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current - Continuous Total Power DiSSipation @ TA =25°C Operating and Storage Junction Temperature Range SYMBOL VCEO VCB VEB IC PDP' TJ. TSTG .

2N6716 : Elektronische Bauelemente 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor FEATURES  High Voltage:VCEO = 100V  Gain of 20 @ IC = 0.5A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector   Base  Emitter TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating 2N6716 Collector to Base Voltage 2N6717 2N6718 2N6716 Collector to Emitter Voltage 2N6717 2N6718 Emitter to Base Voltage Coll.

2N6716 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com .

2N6716 : Collector Cutoff Current VCB=40V, IE=0 VCB=50V, IE=0 VCB=40V, IE=0 D.C. Current Gain IC=10mA, VCE=1V IC=100mA, VCE=1V IC=1A, VCE=1V Symbol 2N6714 2N6715 2N6716 ICBO 2N6714/67.

2N6717 : NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1 E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base B.

2N6717 : NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES 92GU05,06 2N6716,17 60-80 VOLTS 2 AMPS, 1.2 WATTS Applications: • High VCE ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VCEO • Exceptional power-to-price ratio NPN COLLECTOR EMITTER ~~~~~:::::BASE COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -r---i---"';~ .105(2.67) - r.095(2.41) .050(1.27) -.-L =maximum ratings (TA 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current - Continuous Total Power DiSSipation @ TA =25°C Operating and Storage Junction Temperature Range SYMBOL VCEO VCB VEB IC PDP' TJ. TSTG .

2N6717 : Elektronische Bauelemente 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor FEATURES  High Voltage:VCEO = 100V  Gain of 20 @ IC = 0.5A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector   Base  Emitter TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating 2N6716 Collector to Base Voltage 2N6717 2N6718 2N6716 Collector to Emitter Voltage 2N6717 2N6718 Emitter to Base Voltage Coll.




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