F4N60 Datasheet

F4N60 4A 600V N-channel Enhancement Mode Power MOSFET

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2 Features ● Fast Switching ● ESD Im.

Features

● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor. TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 4N60/I4N60/E4N60 /B4N60/D4N60 Maximum Drian-Sourc.