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File Size : 1.69MB
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25.
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ.) - Block Erase time: 3ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81LA 2 Gbit (256M x 8) 3.3V NAND Flash Memory .
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | F59L2G81LA-25TG |
ESMT |
2 Gbit (256M x 8) 3.3V NAND Flash Memory |
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| 2 | F59L2G81A |
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2 Gbit (256M x 8) 3.3V NAND Flash Memory |
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| 3 | F59L2G81KA |
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| 4 | F59L2G81XA-25TG2B |
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2 Gbit (256M x 8) 3.3V NAND Flash Memory |
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| 5 | F59L1G81A |
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1 Gbit (128M x 8) 3.3V NAND Flash Memory |
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