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SVS5N70MU


Part Number SVS5N70MU
Manufacturer Silan Microelectronics
Title 700V DP MOS POWER TRANSISTOR
Description SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conducti...
Features  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS5N70D SVS5N70DTR SVS5N70MJ SVS5N70MN SVS5N70F SVS5N70MU Package TO-252-2L TO-2...

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SVS5N70MJ : SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS5N70D SVS5N70DTR SVS5N70MJ SVS5N70MN SVS5N70F SVS5N70MU Package TO-2.

SVS5N70MN : SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS5N70D SVS5N70DTR SVS5N70MJ SVS5N70MN SVS5N70F SVS5N70MU Package TO-2.




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