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2SJ3053DV

Kexin
Part Number 2SJ3053DV
Manufacturer Kexin
Description P-Channel MOSFET
Published Jul 3, 2019
Detailed Description SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Ex...
Datasheet PDF File 2SJ3053DV PDF File

2SJ3053DV
2SJ3053DV

Overview
SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptional On-resistance and Maximum DC Current Capability ( SOT-23-6 ) 0.
4+0.
1 -0.
1 6 54 1 23 +0.
01 -0.
01 +0.
2 -0.
1 +0.
21.
6 -0.
1 +0.
22.
8 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 +0.
11.
1 -0.
1 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain 0-0.
1 +0.
10.
68 -0.
1 ■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (tp=10us) Power Dissipation Thermal Resistancefrom Junction- to-Ambient (Note 1) Junction Temperature Junction Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM PD RthJA TJ Tstg TL Note 1.
Surface mounted on FR4 board using the minimum recommended pad size.
Rating -150 ±20 -1.
4 -5 0.
35 357 150 -55 to 150 260 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Electrical Characteristics (Ta = 25°C, unless otherwise noted) Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-120V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage (Note 2) VGS(th) VDS=VGS , ID=-250μA Static Drain-Source On-Resistance (Note 2) RDS(On) VGS=-10V, ID=-1.
4A VGS=-6V, ID=-1A Forward Transconductance (Note 2) gFS VDS=-10V, ID=-1.
4A Diode Forward Voltage VSD IS=-1A,VGS=0V Dynamic Characteristics (Note 4) Input Capacitance Ciss Output Capacitance Coss VGS=0V, VDS=-50V, f=1MHz Reverse Transfer Capacitance Crss Switching Characteristics (Note 3, 4) Total Gate Charge Qg Gate Source Charge Qgs VGS=-6V, VDS=-75V, ID=-1A Gate Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time tr td(off) VGEN=-10V,VDD=-75V, RL=75Ω, ID=-1A,RG=1Ω Turn-Off Fall Time tf Note 2.
Pu...


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