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BAV101 Datasheet PDF


Part Number BAV101
Manufacturer GOOD-ARK
Title Fast Switching Diode
Description Features Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with t...
Features Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21. BAV100 thru BAV103 Small-Signal Diode Fast Switching Diodes Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: appro...

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BAV10 : The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total .

BAV100 : The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. 1996 Sep 17 2 Philips Semiconductors Product specification General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAV100 BAV101 BAV102 BAV103 VR continuous reverse voltage BAV100 BAV101 BAV102 BAV103 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an F.

BAV100 : www.vishay.com BAV100, BAV101, BAV102, BAV103 Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION BAV100 BAV101 BAV102 BAV103 VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V ORDER.

BAV100 : BAV100 THRU BAV103 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage B.

BAV100 : BAV100 THRU BAV103 FEATURE Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21. Small Signal Diodes MECHANICAL DATA Case: DO-213AA Glass Case Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Parameter SYMBOLS Reverse Voltage BAV100 BAV101 BAV102 BAV103 Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load.

BAV100 : only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to .

BAV100 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to BAV21WS. Maximum Ratings Continuous Reverse Voltage BAV100 BAV.

BAV100 : Continuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 s t=1 µs Power Dissipation up to Ta=25ºC Storage Temperature Junction Temperature THERMAL RESISTANCE Junction to Ambient in free air SYMBOL VR VRRM IF (AV) IF IFRM IFSM IFSM Ptot Tstg Tj BAV100 50 60 Rth (j-a) BAV101 100 120 BAV102 150 200 250 250 625 1 5 400 - 65 to +175 175 BAV103 200 250 0.375 UNIT V V mA mA mA A A mW ºC ºC K/mW ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage VF IF=100mA IF=200mA Reverse Breakdown Voltage .

BAV100 : Elektronische Bauelemente BAV100 ~ BAV103 Surface Mount Small Signal Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOD-80 (Mini-MELF) Package  Surface Device Type Mounting  Hermetically Sealed Glass  Compression Bonded Construction  All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable  RoHS Compliant  Matte Tin (Sn) Lead Finish  Color band Indicates Negative Polarity SOD-80 (Mini-Melf) BC AC ELECTRICAL SYMBOL Cathode Anode REF. A B C Millimeter Min. Max. 3.30 3.70 1.40 1.60 0.28 0.50 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Max.

BAV100 : BAV 100...BAV 103 Surface mount diode Ultrafast silicon rectifier diodes BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features                    !"#$  % &  &  '  '  '    ( & ) '  * + ,    +  ,   Mechanical Data         - .%$/011 - 2%.$3  4 &   5" &  *         ,   6$2*.$78     &     +  2  9& & /5 8      1)          ** : 8  2) 6; : 5 15 * : 8  3) *1 : 8  4)     ,  ( 8  .

BAV100 : Features Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21. BAV100 thru BAV103 Small-Signal Diode Fast Switching Diodes Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Yellow Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Symbol Limit Continuous reverse voltage Repetitive peak reverse voltage Forward DC current at Tamb=25oC (1) Rectified current (Average) half wave rectification with resist. load at Tamb=25oC and f50Hz (1) Repetitive peak forward current at f50Hz, Θ=180O, Tamb=.

BAV100W : 1 Cathode 2 Anode 2 1 Simplified outline SOD-123 and symbol Absolute Maximum Ratings at 25 °C Parameter Symbols BAV100W BAV101W BAV102W BAV103W Units Maximum Repetitive Peak Reverse Voltage VRRM 60 120 200 250 V Maximum RMS voltage VRMS 50 100 150 200 V Continuous Forward Current IF 250 mA Repetitive Peak Forward Current Non-reptitive Peak Forward Surge Current at 1s at 1ms at 1 us Total Power Dissipation Typical Thermal Resistance (1) Operating and Storage Temperature Range (1)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) .

BAV100WL : 1 Cathode 2 Anode 12 Simplified outline SOD-123FL and symbol Absolute Maximum Ratings at 25 °C Parameter Symbols BAV100WL BAV101WL BAV102WL BAV103WL Units Maximum Repetitive Peak Reverse Voltage VRRM 60 120 200 250 V Maximum RMS voltage VRMS 50 100 150 200 V Continuous Forward Current IF 250 mA Repetitive Peak Forward Current Non-reptitive Peak Forward Surge Current at 1s at 1ms at 1 us Total Power Dissipation Typical Thermal Resistance (1) Operating and Storage Temperature Range (1)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Characteristics at Ta = 25 .

BAV101 : The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. 1996 Sep 17 2 Philips Semiconductors Product specification General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAV100 BAV101 BAV102 BAV103 VR continuous reverse voltage BAV100 BAV101 BAV102 BAV103 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an F.

BAV101 : BAV100 THRU BAV103 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage B.

BAV101 : www.vishay.com BAV100, BAV101, BAV102, BAV103 Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION BAV100 BAV101 BAV102 BAV103 VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V ORDER.

BAV101 : BAV100 THRU BAV103 FEATURE Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21. Small Signal Diodes MECHANICAL DATA Case: DO-213AA Glass Case Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Parameter SYMBOLS Reverse Voltage BAV100 BAV101 BAV102 BAV103 Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load.




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