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GSBAT54M Datasheet PDF


Part Number GSBAT54M
Manufacturer GOOD-ARK
Title Schottky Barrier Diode
Description Features z Extremely Fast Switching Speed z Low Forward Voltage Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repe...
Features z Extremely Fast Switching Speed z Low Forward Voltage Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Forward Current Power Dissipation Thermal Resistance from Junction to Ambient Junct...

File Size 425.79KB
Datasheet GSBAT54M PDF File








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GSBAT54 : These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit Charact.

GSBAT54A : These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit Charact.

GSBAT54ADW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.

GSBAT54AT : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54T GSBAT54xT Series Schottky Diode GSBAT54AT 3 1 2 SOT-523 Marking: L1 GSBAT54CT Marking: L2 GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Symbol VRRM Value 30 Working Peak Reverse Voltage VRWM 30 DC Reverse Voltage VR 30 Forward Continuous Voltage Repetitive Peak Forward Voltage Non-repetitive Peak Forward Surge Current @t1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature IF IFRM IFSM PD RθJA TJ,TS.

GSBAT54BRW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.

GSBAT54C : These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit Charact.

GSBAT54CDW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.

GSBAT54CT : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54T GSBAT54xT Series Schottky Diode GSBAT54AT 3 1 2 SOT-523 Marking: L1 GSBAT54CT Marking: L2 GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Symbol VRRM Value 30 Working Peak Reverse Voltage VRWM 30 DC Reverse Voltage VR 30 Forward Continuous Voltage Repetitive Peak Forward Voltage Non-repetitive Peak Forward Surge Current @t1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature IF IFRM IFSM PD RθJA TJ,TS.

GSBAT54DW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.

GSBAT54JW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.

GSBAT54KAW : Features ■ Low forward voltage drop ■ Fast switching Schematic Diagram and Marking GSBAT54KxW Schottky Barrier Diode 3 1 2 SOT-323 GSBAT54KW Marking: KL5 GSBAT54KAW Marking: KL6 GSBAT54KCW Marking: KL7 GSBAT54KSW Marking: KL8 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IFSM IFRM PD RΘJA TJ TSTG Value 30 200 600 300 200 500 125 -55.

GSBAT54KCW : Features ■ Low forward voltage drop ■ Fast switching Schematic Diagram and Marking GSBAT54KxW Schottky Barrier Diode 3 1 2 SOT-323 GSBAT54KW Marking: KL5 GSBAT54KAW Marking: KL6 GSBAT54KCW Marking: KL7 GSBAT54KSW Marking: KL8 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IFSM IFRM PD RΘJA TJ TSTG Value 30 200 600 300 200 500 125 -55.

GSBAT54KSW : Features ■ Low forward voltage drop ■ Fast switching Schematic Diagram and Marking GSBAT54KxW Schottky Barrier Diode 3 1 2 SOT-323 GSBAT54KW Marking: KL5 GSBAT54KAW Marking: KL6 GSBAT54KCW Marking: KL7 GSBAT54KSW Marking: KL8 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IFSM IFRM PD RΘJA TJ TSTG Value 30 200 600 300 200 500 125 -55.

GSBAT54KW : Features ■ Low forward voltage drop ■ Fast switching Schematic Diagram and Marking GSBAT54KxW Schottky Barrier Diode 3 1 2 SOT-323 GSBAT54KW Marking: KL5 GSBAT54KAW Marking: KL6 GSBAT54KCW Marking: KL7 GSBAT54KSW Marking: KL8 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IFSM IFRM PD RΘJA TJ TSTG Value 30 200 600 300 200 500 125 -55.

GSBAT54S : These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit Charact.

GSBAT54SDW : Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Pow.




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