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SID04N65SL Datasheet PDF


Part Number SID04N65SL
Manufacturer SeCoS
Title N-Ch Enhancement Mode Power MOSFET
Description The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for...
Features
 Advanced high cell density Trench technology
 Super Low Gate Charge
 Excellent CdV/dt effect decline
 100% EAS Guaranteed
 Green Device Available A BC D  Gate GE  Drain
 Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.45 0.90 6.50 7.50 7....

File Size 591.97KB
Datasheet SID04N65SL PDF File








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SID04N60-C : This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits. FEATURES High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified MARKING 04N60 Date Code ORDER INFORMATION Part Number Type SID04N60-C Lead (Pb)-free and Halogen-free TO-251 A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40.




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