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SVF18N50FJ Datasheet PDF


Part Number SVF18N50FJ
Manufacturer Silan Microelectronics
Title 500V N-CHANNEL MOSFET
Description SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-volta...
Features  18A,500V,RDS(on)(typ.)=0.26@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ Package TO-220F-3L TO-220-3L TO-3P TO-220FJ-3L Marking SVF18N50F SVF18N50T 18N50 SVF18N50FJ Hazar...

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SVF18N50F : SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,500V,RDS(on)(typ.)=0.26@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ.

SVF18N50PN : SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,500V,RDS(on)(typ.)=0.26@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ.

SVF18N50T : SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,500V,RDS(on)(typ.)=0.26@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ.




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