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UF5N08

UTC

N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF5N08 5A, 80V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UF5N08 is a ...


UTC

UF5N08

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Description
UNISONIC TECHNOLOGIES CO., LTD UF5N08 5A, 80V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UF5N08 is a N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) < 0.21Ω @ VGS =10V, ID =2.5A * Simple drive requirement  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF5N08L-TM3-T UF5N08G-TM3-T UF5N08L-TN3-R UF5N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-282.B UF5N08 Power MOSFET  ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage Drain Current Avalanche Energy (Note 3) Continuous Pulsed (Note 2) Single Pulsed (Note 3) VGSS ID IDM EAS ±20 5 15 10 V A A mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 18 V/ns Power Dissipation PD 32 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction tempera...




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