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TIM5964-60SL-422

Part Number	TIM5964-60SL-422
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 19, 2020
Detailed Description	MICROWAVE POWER GaAs FET TIM5964-60SL-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 5.85G...
Datasheet	TIM5964-60SL-422 PDF File

Overview

MICROWAVE POWER GaAs FET TIM5964-60SL-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.
0dBm at 5.
85GHz to 6.
75GHz ŋHIGH GAIN G1dB= 8.
0dB at 5.
85GHz to 6.
75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.
5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
5A f= 5.
85 to 6.
75GHz Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch Two-Tone Test Po= 36.
5dBm, f= 5MHz (Single Carrier Level) (VDS  IDS  Pin  P1dB)  Rth(c-c) Recommended Gate Resistance(Rg): 28  UNIT dBm dB A dB % dBc A °C MIN.
TYP.
MAX.
47.
0 48.
0  7.
0 8.
0   13.
2 15.
0   0.
8  40  -40 -45    11.
8   100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTIC...

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TIM5964-60SL-422 MICROWAVE POWER GaAs FET - Toshiba

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