BUW131A Datasheet

BUW131A NPN Transistor

High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIM.

Features

ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW131 BUW131A IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage BUW131 IC= 3A; IB= 0.4A BUW131A IC= 3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage BUW131 IC= 5A; IB= 0.66A BUW131A IC= 5A; IB= 1A VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage BUW131 BUW131A Collector-Base Cutoff Current Emitter Cutoff Current IC= 5A; IB= 0.66A IC= 5A; IB= 1A VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=100℃ VEB= 6V; IC= 0 hFE DC Current Gain IC= 5.