BD643 Datasheet

BD643 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD644 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull.

Features

Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD643 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 45V; IE= 0 VCB= 30V; IE= 0; TC= 150℃ ICEO Collector Cutoff Current VCE= 25V; IB= .