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isc N-Channel MOSFET Transistor IXTA180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Conv.
·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
85
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
180
IDM
Drain Current-Single Pulsed
480
PD
Total Dissipation @TC=25℃
430
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~17.
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