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STB11N65M5

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistanc...


STB11N65M5

INCHANGE


Octopart Stock #: O-1459991

Findchips Stock #: 1459991-F

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Description
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta
More View =25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 9 5.6 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation 85 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.47 UNIT ℃/W STB11N65M5 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage ISD=25A, VGS = 0 V STB11N65M5 MIN TYP MAX UNIT 650 V 3.0 5.0 V 430 480 mΩ ±0.1 μA 1 μA 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark






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