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STB11N65M5-2

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance...



STB11N65M5-2

INCHANGE


Octopart Stock #: O-1459992

Findchips Stock #: 1459992-F

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Description
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 9 5.6 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation 85 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.47 UNIT ℃/W STB11N65M5-2 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage ISD= 9A, VGS = 0 V STB11N65M5-2 MIN TYP MAX UNIT 650 V 3.0 5.0 V 480 mΩ ±0.1 μA 1 μA 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time wi...




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