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STB11NM60-1

INCHANGE

N-Channel MOSFET

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast ...



STB11NM60-1

INCHANGE


Octopart Stock #: O-1459994

Findchips Stock #: 1459994-F

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Description
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 160 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.78 ℃/W STB11NM60-1 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VDS= 600V; TC=125℃ VSD Diode Forward On-Voltage IS= 11A ;VGS= 0 STB11NM60-1 MIN TYPE MAX UNIT 600 V 3 5 V 450 mΩ ±100 nA 1 µA 10 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...




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