DatasheetsPDF.com

13001S8D

JTD

NPN Transistor

SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switch...


JTD

13001S8D

File Download Download 13001S8D Datasheet


Description
SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) Parameter Symbol Value Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current Ic 0.5 A Total Power Dissipattion Pc 0.65 W Storage Temperature Tstg -65~150 ℃ Junction Temperature Tj 150 ℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tj=25℃ Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector- Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Ic=0.5mA,Ie=0 600 Ic=10mA,Ib=0 400 Ie=1mA,Ic=0 7 Vcb=600V,Ie=0 Vce=400V,Ib=0 Veb=7V,Ic=0 Vce=20V,Ic=20mA 10 Ic=200mA,Ib=100mA Ic=200mA,Ib=100mA Storage Time Ts Ic=0.1mA, (UI9600) Falling Time fT VCE =20V,Ic=20mA f=1MHZ CLASSIFICATION OF Hfe(1) Range 10-15 15-20 20-25 Max Unit V V V 100 μA 20 μA 100 μA 40 0.6 V 1.2 V 2 μS 0.8 μS 30-35 PDF created with pdfFactory Pro trial version www.pdffactory.com ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)