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AOTF3N100


Part Number AOTF3N100
Manufacturer Alpha & Omega Semiconductors
Title N-Channel MOSFET
Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of...
Features Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD 132 1.1 AOTF3N100 1000 ±30 2.8* 1.8* 10 2.2 72 145 5 38 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL ...

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AOTF3N100 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.3 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOTF3N100 ELECTRICAL CHARACTERISTICS TC=25℃ unless .




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