DatasheetsPDF.com

TTC013


Part Number TTC013
Manufacturer Toshiba
Title NPN Transistor
Description Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features (1) High colle...
Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbo...

File Size 180.79KB
Datasheet TTC013 PDF File








Similar Ai Datasheet

TTC011 : Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features (1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 Emitter-base voltage VEBO 5 Collector current (DC) (Note 1) IC 1 A Collector current (pulsed) (Note 1) ICP 2 Base current IB 0.1 Collector power dissipation PC 1.5 W Co.

TTC011B : Bipolar Transistors Silicon NPN Epitaxial Type TTC011B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers 2. Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTA006B : VCEO = 230 V (min) : Cob = 20 pF (typ.) : fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTC011B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. Absolute Maximum .

TTC012 : Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V 3. Packaging and Internal Circuit TTC012 1. Base 2. Collector 3. Emitter New PW-Mold2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage VCBO 800 V VCES 800 VCEO 375 Emitter-base voltage Collector current (DC) Collector current (pulsed) Ba.

TTC014 : Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCES 900 Collector-emit.

TTC015B : Bipolar Transistors Silicon NPN Epitaxial Type TTC015B 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1A) (4) Complementary to TTA008B 3. Packaging and Internal Circuit (Note) TTC015B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding .

TTC016 : Bipolar Transistors Silicon NPN Epitaxial Type TTC016 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.) 3. Packaging and Internal Circuit TTC016 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEX 100 Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 9 Collector current .

TTC017 : Bipolar Transistors Silicon NPN Epitaxial Type TTC017 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A) 3. Packaging and Internal Circuit TTC017 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-03 1 2015-03-24 Rev.1.0 TTC017 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 VCEO 80 Emitter-bas.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)