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APT30M70BVR Datasheet PDF

INCHANGE
Part Number APT30M70BVR
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI...
Features
·Drain Current
  –ID=48A@ TC=25℃
·Drain Source Voltage- : VDSS=300V(Min)
·Static Drain-Source On-Resistance : RDS(on) =0.07Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and ...

File Size 371.23KB
Datasheet PDF File APT30M70BVR PDF File


APT30M70BVR APT30M70BVR APT30M70BVR




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APT30M70BVFR : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pluse 192 A PD Total Dissipation @TC=25℃ 370 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.34 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT30M70BVFR ELECTRICAL CHARACTERISTICS TC=25℃ unle.

APT30M70BVFR : APT30M70BVFR 300V 48A 0.070Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT30M70BVFR UNIT Volts Amps 300 48 192 ±30 ±40 370 2.96 -55 to 150 300 48 30 4.

APT30M70BVR : APT30M70BVR 300V 48A 0.070Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25° C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30M70BVR UNIT Volts Amps 300 48 192 ±30 ±40 370 2.96 -55 to.




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