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APT47N65BC3G Datasheet PDF


Part Number APT47N65BC3G
Manufacturer Microsemi
Title MOSFET
Description APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • In...
Features Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 650 Drain-Source On-State Resi...

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APT47N65BC3 : APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N65B_SC3 UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 650 47 141 ±20 ±30 417 3.33 Volts Amps Vo.

APT47N65BC3 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse 141 A PD Total Dissipation @TC=25℃ 417 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.3 ℃/W APT47N65BC3 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT47N65BC3 ELECTRICAL CHARACTERISTIC.




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