Part Number C2923
Manufacturer Panasonic
Title Silicon PNP Transistor
Description MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtuincutelidfetcyypce...
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C2921 : LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC2921 VCBO 160 VCEO 160 VEBO IC IB PC Tj Tstg 5 15 4 150(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC2921 Unit ICBO VCB=160V 100max µA IEBO VEB=5V 100max µA V(BR)CEO hFE IC=25mA VCE=4V, IC=5A 160min 50min∗ V VCE(sat) IC=5A, IB=0.5A 2.0max V fT VCE=12V, IE=–2A 60typ MHz COB VCB=10V, f=1MHz 200typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VB2 IB1 (V.

C2922 : LAPT 2SC2922 Application : Audio and General Purpose (Ta=25°C) 2SC2922 100max 100max 180min 30min∗ 2.0max 50typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj 2SC2922 180 180 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8V IC=8A, IB=0.8A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -.

C2923 : ·With TO-202 package ·High VCEO ·Low COB APPLICATIONS ·For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.2 1.4 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERIST.

C2925 : Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 60 V pe) Collector-emitter voltage (Base open) VCEO 50 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 15 2.3±0.2 V sta tinu Collector current IC 0.7 A a e cycle iscon Peak collector current ICP 1.5 A life d, d Collector power dissipation PC 750 mW n u duct type Junction temperature.

C2926 : .

C2929 : .

C2929 : ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 400 7 3 1 40 150 -45~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case .

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