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R6015ENZ


Part Number R6015ENZ
Manufacturer ROHM
Title Power MOSFET
Description R6015ENZ   Nch 600V 15A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.29Ω ID ±15A TO-3PF PD 120W          lInner c...
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape wi...

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R6015ENJ : R6015ENJ   Nch 600V 15A Power MOSFET    Datasheet VDSS 600V lOutline TO-263S   RDS(on)(Max.) 0.29Ω SC-83 ID ±15A LPT(S) PD lFeatures 184W          lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6015ENJ Unit Drain - Source voltage Continuous drain curren.

R6015ENJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 184 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.68 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6015ENJ ELECTRICAL CHARACTERISTICS TC=25℃ unless other.

R6015ENX : R6015ENX   Nch 600V 15A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.29Ω ID ±15A TO-220FM PD 60W          lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±15 A ±30 A Gate - Source voltage static AC(f>1Hz) VGSS ±20.

R6015ENX : Isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor R6015ENX ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage;static Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 15 8.1 30 PD Total Dissipation 60 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ SYMBO L PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(.

R6015ENZ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.04 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6015ENZ ELECTRICAL CHARACTERISTICS TC=25℃ unless other.




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