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R6504ENX


Part Number R6504ENX
Manufacturer ROHM
Title Power MOSFET
Description ...
Features ...

File Size 1.83MB
Datasheet R6504ENX PDF File








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R6504ENJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 58 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.2 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6504ENJ ELECTRICAL CHARACTERISTICS TC=25℃ unless ot.

R6504ENJ : .

R6504ENX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.13 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6504ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.




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