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R6509ENJ Datasheet PDF


Part Number R6509ENJ
Manufacturer ROHM
Title Power MOSFET
Description R6509ENJ   Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Para...
Features 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6509ENJ Basic ordering unit...

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R6509ENJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 94 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.3 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6509ENJ ELECTRICAL CHARACTERISTICS TC=25℃ unless othe.

R6509ENX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 48 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.6 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6509ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless othe.

R6509ENX : R6509ENX   Nch 650V 9A Power MOSFET    Datasheet lOutline VDSS 650V   RDS(on)(Max.) 0.585Ω ID ±9A TO-220FM PD 48W          lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±9 A ±27 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, si.




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