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R6530KNZ


Part Number R6530KNZ
Manufacturer ROHM
Title Power MOSFET
Description R6530KNZ   Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 86W lFeatures 1) Low on-resistance 2) Ultra fast switching speed...
Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-3PF                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Tube Packing code C17 Marking R6530KNZ Quantity (pcs) 300 ...

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R6530KNX : R6530KNX   Nch 650V 30A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 86W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220FM          lInner circuit   lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±30 A ±90 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse .

R6530KNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6530KNX ELECTRICAL CHARACTERISTICS TC=25℃ unless other.

R6530KNX1 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6530KNX1 ELECTRICAL CHARACTERISTICS TC=25℃ unless othe.

R6530KNX3 : R6530KNX3 Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 307W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220AB lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Tube Packing code C16 Marking R6530KNX3 Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±30 A ±90 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanch.

R6530KNZ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6530KNZ ELECTRICAL CHARACTERISTICS TC=25℃ unless other.

R6530KNZ1 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 305 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.41 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6530KNZ1 ELECTRICAL CHARACTERISTICS TC=25℃ unless othe.

R6530KNZ4 : R6530KNZ4   Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 305W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-247G                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Tube Packing code C13 Marking R6530KNZ4 Quantity (pcs) 600 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±30 A ±90 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS.




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