DatasheetsPDF.com

RJ1G08CGN


Part Number RJ1G08CGN
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT...
Features
·Drain Current
  –ID= 80A@ TC=25℃
·Drain Source Voltage- : VDSS=40V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and...

File Size 250.09KB
Datasheet RJ1G08CGN PDF File








Similar Ai Datasheet

RJ1G08CGN : RJ1G08CGN   Nch 40V 80A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 5.6mΩ ±80A 78W lFeatures 1) Low on - resistance 2) High power small mold package   (LPTL) 3) Pb-free plating ; RoHS compliant 4) 100% UIS tested lOutline TO-263AB LPT(L)            lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Type Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage VDSS Continuous drain current VGS = 10V ID*1 Pulsed drain current IDP*2 Gate - Source voltage VGSS Avalanche current, single pulse IAS*3 Avalanche energy, single pulse EAS*3 Power dissipat.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)