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2SK2788

Renesas

Silicon N-Channel MOSFET

2SK2788 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.12  typ (VGS = 10...


2SK2788

Renesas


Octopart Stock #: O-1491244

Findchips Stock #: 1491244-F

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Description
2SK2788 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching  4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 21 3 4 Preliminary Datasheet R07DS0511EJ0300 (Previous: REJ03G1033-0200) Rev.3.00
More View Jul 27, 2011 D 1. Gate 2. Drain G 3. Source 4. Drain S Note: Marking is “VY” Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  100 s, duty cycle  10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 60 20 2 4 2 1 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0511EJ0300 Rev.3.00 Jul 27, 2011 Page 1 of 6 2SK2788 Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS 20 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state RDS(on) — resistance RDS(on) — Forward transfer admittance |yfs| 1.6 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body to drain diode forward voltage VDF — Body to drain diode reverse trr — recovery time Notes: 3. Pulse test Typ — — — — — 0.12 0.16 2.8 180 90 30 9 15 40 35 0.9 35 Max — — 10 10 2.0 0.16 0.25 — — — — — — — — — — Preliminary Unit V V A A V   S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V*3 ID = 1 A, VGS = 4 V*3 ID = 1 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 1 A, RL = 30  ID = 2 A, VGS = 0 IF = 2 A, VGS = 0 diF/ dt = 50A/s R07DS0511EJ0300 Rev.3.00 Jul 27, 2011 Page 2 of 6 Channel Dissipation Pch (W) 2SK2788 Main Characteristics Power vs. Temperature Derating 2.0 Test condition : When using the alumina ceramic 1.5 board (12.5 x 20 x 0.7 mm) 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current ID (A) Typical Output Characteristics 5 6V 5V 10 V 4 V 4 3.5 V 3 Pulse Test 3V 2 2.5 V 1 VGS = 2 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1.2 0.8 0.4 ID = 2 A 1A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) R07DS0511EJ0300 Rev.3.00 Jul 27, 2011 Static Drain to Sou






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