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EPC2012C

EPC

Power Transistor

eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC201...


EPC2012C

EPC


Octopart Stock #: O-1492003

Findchips Stock #: 1492003-F

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Description
eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally
More View low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25˚C, RθJA = 26°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 5 A 22 6 V -4 -40 to 150 °C -40 to 150 EPC2012C eGaN® FETs are supplied only in passivated die form with solder bars Applications • High Frequency DC-DC Conversion • Class D Audio • Wireless Power Transfer Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra Low QG • Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 4.2 RθJB Thermal Resistance, Junction-to-Board 12.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 85 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS MIN TYP MAX BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 60 μA VGS = 0 V, VDS = 160 V 200 10 50 Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage VGS = 5 V VGS = -4 V 0.2 1 10 50 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.4 2.5 RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 3 A 70 100 VSD Source-Drain Forward Voltage All measurements were done with substrate connected to source. IS = 0.5 A, VGS = 0 V 1.9 UNIT V µA mA µA V mΩ V EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | |1 eGaN® FET DATASHEET EPC2012C Dynamic Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX CISS Input Capacitance 100 140 CRSS Reverse Transfer Capacitance VDS = 100 V, VGS = 0 V 0.4 0.6 COSS Output Capacitance 64 85 RG Gate Resistance 0.6 QG Total Gate Charge VDS = 100 V, VGS = 5 V, ID = 3 A 1 1.3 QGS Gate-to-Source Charge 0.3 QGD Gate-to-Drain Charge VDS = 100 V, ID = 3 A 0.2 0.35 QG(TH) Gate Charge at Threshold 0.2 QOSS Output Charge VDS = 100 V, VGS = 0 V 10 13 QRR Source-Drain Recovery Charge 0 All measurements were done






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