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BCW68F

nexperia

PNP Transistor

BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 — 21 April 2017 Product data sheet 1 General descrip...


BCW68F

nexperia


Octopart Stock #: O-1492004

Findchips Stock #: 1492004-F

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Description
BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 — 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-p
More View urpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current peak collector current DC current gain BCW68F BCW68G BCW68H Conditions open base single pulse; tp ≤ 1 ms VCE = -1 V; IC = -100 mA; Tamb = 25 °C [1] [1] pulsed: tp ≤ 300 μs, δ ≤ 0.02 Min Typ Max Unit - - -45 V - - -800 mA - - -1 A 100 - 250 160 - 400 250 - 600 Nexperia 5 Pinning information Table 2. Pinning Pin Symbol 1 B 2 E 3 C Description base emitter collector BCW68 series 45 V, 800 mA PNP general-purpose transistor Simplified outline 3 1 2 Graphic symbol C B E sym132 6 Ordering information Table 3. Ordering information Type number Package Name BCW68F TO-236AB BCW68G BCW68H Description plastic surface-mounted package; 3 leads 7 Marking Table 4. Marking Type number BCW68F BCW68G BCW68H Marking code [1] ET% [1] EU% [1] EV% [1] % = placeholder for manufacturing site code 8 Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO VCEO VEBO IC ICM IB collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current open emitter open base open collector single pulse; tp ≤ 1 ms BCW68X_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 April 2017 Version SOT23 Min Max Unit - -50 V - -45 V - -5 V - -800 mA - -1 A - -100 mA © Nexperia B.V. 2017. All rights reserved. 2 / 13 Nexperia BCW68 series 45 V, 800 mA PNP general-purpose transistor Symbol Parameter Conditions IBM peak base current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C [1] Tj junction temperature Tamb Tstg ambient temperature storage temperature [1] Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint. Min -55 -65 400 Ptot (mW) 300 aaa-026537 Max -200 250 150 150 150 Unit mA mW °C °C °C 200 100 0 -75 -25 25 FR4 PCB, standard footprint Figure 1. Power derating curve 9 Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 75 125 175 Tamb (°C) Min Typ Max Unit [1] -






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